Highly stable zinc oxynitride thin-film transistors with field-effect mobility exceeding 100 cm2/Vs

Yang Soo Kim; Hyun Suk Kim

doi:10.1149/07510.0145ecst

Highly stable zinc oxynitride thin-film transistors with field-effect mobility exceeding 100 cm²/Vs

Yang Soo Kim, Hyun Suk Kim

Department of Energy and Materials Engineering

Chungnam National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A recent work on a relatively new type of semiconductor, namely zinc oxynitride (ZnON) as a promising candidate for the next-generation display applications, will be presented.(1) High mobility ZnON thin films were deposited by RF sputtering. In order to enhance the mobility and stability of ZnON TFTs, thickness and annealing conditions of ZnON thin films were optimized. Using ZnON films grown using the optimum conditions, the fabrication of high performance devices with field effect mobility exceeding 120 cm²/Vs is demonstrated, based on simple reactive RF sputtering methods.

Original language	English
Title of host publication	Thin Film Transistors 13, TFT 13
Editors	Y. Kuo
Publisher	Electrochemical Society Inc.
Pages	145-148
Number of pages	4
Edition	10
ISBN (Electronic)	9781607687276, 9781607687672, 9781607687689, 9781607687696, 9781607687702, 9781607687719, 9781607687726, 9781607687733, 9781607687740, 9781607687757, 9781607687771, 9781607687788, 9781607687795, 9781607687801, 9781607687818, 9781607687825, 9781607687832, 9781607687849, 9781607687856, 9781607687863, 9781607687887, 9781607687894, 9781607687900, 9781607687917, 9781607687924, 9781607687931, 9781607687948, 9781607687955, 9781607687962, 9781607687979, 9781607687986, 9781607687993, 9781607688006, 9781607688013, 9781607688020, 9781607688037
DOIs	https://doi.org/10.1149/07510.0145ecst
State	Published - 2016
Event	Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: 2 Oct 2016 → 7 Oct 2016

Publication series

Name	ECS Transactions
Number	10
Volume	75
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
Country/Territory	United States
City	Honolulu
Period	2/10/16 → 7/10/16

Access to Document

10.1149/07510.0145ecst

Cite this

@inproceedings{747240e0d2db48a689f18430fc23e807,

title = "Highly stable zinc oxynitride thin-film transistors with field-effect mobility exceeding 100 cm2/Vs",

abstract = "A recent work on a relatively new type of semiconductor, namely zinc oxynitride (ZnON) as a promising candidate for the next-generation display applications, will be presented.(1) High mobility ZnON thin films were deposited by RF sputtering. In order to enhance the mobility and stability of ZnON TFTs, thickness and annealing conditions of ZnON thin films were optimized. Using ZnON films grown using the optimum conditions, the fabrication of high performance devices with field effect mobility exceeding 120 cm2/Vs is demonstrated, based on simple reactive RF sputtering methods.",

author = "Kim, {Yang Soo} and Kim, {Hyun Suk}",

note = "Publisher Copyright: {\textcopyright} 2016 The Electrochemical Society.; Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting ; Conference date: 02-10-2016 Through 07-10-2016",

year = "2016",

doi = "10.1149/07510.0145ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "10",

pages = "145--148",

editor = "Y. Kuo",

booktitle = "Thin Film Transistors 13, TFT 13",

address = "United States",

edition = "10",

}

Kim, YS & Kim, HS 2016, Highly stable zinc oxynitride thin-film transistors with field-effect mobility exceeding 100 cm²/Vs. in Y Kuo (ed.), Thin Film Transistors 13, TFT 13. 10 edn, ECS Transactions, no. 10, vol. 75, Electrochemical Society Inc., pp. 145-148, Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 2/10/16. https://doi.org/10.1149/07510.0145ecst

Highly stable zinc oxynitride thin-film transistors with field-effect mobility exceeding 100 cm²/Vs. / Kim, Yang Soo; Kim, Hyun Suk.
Thin Film Transistors 13, TFT 13. ed. / Y. Kuo. 10. ed. Electrochemical Society Inc., 2016. p. 145-148 (ECS Transactions; Vol. 75, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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