Abstract
High-performance thin-film transistors (TFTs) based on ZnON channels were fabricated using a dc reactive sputtering method. To improve the photoinduced bias stability, a postannealing process was carried out at a low ambient pressure (∼ 100 mTorr, air ambient) at 250 °C for various annealing times (1-5 h). The transfer characteristics of the postannealed ZnON TFTs exhibited an improved subthreshold swing ranging from 0.60 to 0.42 V/decade. Other transport properties remained similar including a high mobility (μsat) of >50 cm2/Vs, a threshold voltage (Vth) of-2.5 V, and an ON-OFF drain current ratio of > 108. In addition, photoinduced bias reliability under a gate bias stress (VG =-20 V) was significantly improved from-10.88 V (1 h) to-2.28 V (5 h). These results can be explained by the enhancement of bonding properties between Zn metal and two different anions (O, N) as stable N-Zn-O states.
Original language | English |
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Article number | 6939617 |
Pages (from-to) | 38-40 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 36 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jan 2015 |
Keywords
- High mobility
- Illumination
- Reactive sputtering
- Reliability
- Transistors
- Zinc oxynitride