Highly stable ZnON thin-film transistors with high field-effect mobility exceeding 50 cm2/Vs

Kyung Chul Ok, Hyun Jun Jeong, Hyun Suk Kim, Jin Seong Park

Research output: Contribution to journalArticlepeer-review

59 Scopus citations

Abstract

High-performance thin-film transistors (TFTs) based on ZnON channels were fabricated using a dc reactive sputtering method. To improve the photoinduced bias stability, a postannealing process was carried out at a low ambient pressure (∼ 100 mTorr, air ambient) at 250 °C for various annealing times (1-5 h). The transfer characteristics of the postannealed ZnON TFTs exhibited an improved subthreshold swing ranging from 0.60 to 0.42 V/decade. Other transport properties remained similar including a high mobility (μsat) of >50 cm2/Vs, a threshold voltage (Vth) of-2.5 V, and an ON-OFF drain current ratio of > 108. In addition, photoinduced bias reliability under a gate bias stress (VG =-20 V) was significantly improved from-10.88 V (1 h) to-2.28 V (5 h). These results can be explained by the enhancement of bonding properties between Zn metal and two different anions (O, N) as stable N-Zn-O states.

Original languageEnglish
Article number6939617
Pages (from-to)38-40
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number1
DOIs
StatePublished - 1 Jan 2015

Keywords

  • High mobility
  • Illumination
  • Reactive sputtering
  • Reliability
  • Transistors
  • Zinc oxynitride

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