Highly temperature insensitive, deep-well 4.8 μm emitting quantum cascade semiconductor lasers

J. C. Shin; M. D'Souza; Z. Liu; J. Kirch; L. J. Mawst; D. Botez; I. Vurgaftman; J. R. Meyer

doi:10.1063/1.3139069

Highly temperature insensitive, deep-well 4.8 μm emitting quantum cascade semiconductor lasers

J. C. Shin, M. D'Souza, Z. Liu, J. Kirch, L. J. Mawst, D. Botez, I. Vurgaftman, J. R. Meyer

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

4.8 μm emitting, quantum cascade (QC) lasers that suppress carrier leakage out of their active regions to the continuum have been realized by using deep (in energy) quantum wells in the active regions, tall barriers in and around the active regions, and tapered conduction-band-edge relaxation regions. The characteristic temperature coefficients T₀ and T₁ for the threshold current density Jth and slope efficiency, respectively, reach values of 238 K over the 20-60 °C temperature range, which means that J _th and the slope efficiency vary with temperature half as fast as those of conventional QC lasers. In turn, significantly improved continuous wave performance is expected.

Original language	English
Article number	201103
Journal	Applied Physics Letters
Volume	94
Issue number	20
DOIs	https://doi.org/10.1063/1.3139069
State	Published - 2009

Access to Document

10.1063/1.3139069

Cite this

@article{93a86f6c565148e5a96a0875772effce,

title = "Highly temperature insensitive, deep-well 4.8 μm emitting quantum cascade semiconductor lasers",

abstract = "4.8 μm emitting, quantum cascade (QC) lasers that suppress carrier leakage out of their active regions to the continuum have been realized by using deep (in energy) quantum wells in the active regions, tall barriers in and around the active regions, and tapered conduction-band-edge relaxation regions. The characteristic temperature coefficients T0 and T1 for the threshold current density Jth and slope efficiency, respectively, reach values of 238 K over the 20-60 °C temperature range, which means that J th and the slope efficiency vary with temperature half as fast as those of conventional QC lasers. In turn, significantly improved continuous wave performance is expected.",

author = "Shin, {J. C.} and M. D'Souza and Z. Liu and J. Kirch and Mawst, {L. J.} and D. Botez and I. Vurgaftman and Meyer, {J. R.}",

year = "2009",

doi = "10.1063/1.3139069",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Highly temperature insensitive, deep-well 4.8 μm emitting quantum cascade semiconductor lasers

AU - Shin, J. C.

AU - D'Souza, M.

AU - Liu, Z.

AU - Kirch, J.

AU - Mawst, L. J.

AU - Botez, D.

AU - Vurgaftman, I.

AU - Meyer, J. R.

PY - 2009

Y1 - 2009

N2 - 4.8 μm emitting, quantum cascade (QC) lasers that suppress carrier leakage out of their active regions to the continuum have been realized by using deep (in energy) quantum wells in the active regions, tall barriers in and around the active regions, and tapered conduction-band-edge relaxation regions. The characteristic temperature coefficients T0 and T1 for the threshold current density Jth and slope efficiency, respectively, reach values of 238 K over the 20-60 °C temperature range, which means that J th and the slope efficiency vary with temperature half as fast as those of conventional QC lasers. In turn, significantly improved continuous wave performance is expected.

AB - 4.8 μm emitting, quantum cascade (QC) lasers that suppress carrier leakage out of their active regions to the continuum have been realized by using deep (in energy) quantum wells in the active regions, tall barriers in and around the active regions, and tapered conduction-band-edge relaxation regions. The characteristic temperature coefficients T0 and T1 for the threshold current density Jth and slope efficiency, respectively, reach values of 238 K over the 20-60 °C temperature range, which means that J th and the slope efficiency vary with temperature half as fast as those of conventional QC lasers. In turn, significantly improved continuous wave performance is expected.

UR - http://www.scopus.com/inward/record.url?scp=65949123790&partnerID=8YFLogxK

U2 - 10.1063/1.3139069

DO - 10.1063/1.3139069

M3 - Article

AN - SCOPUS:65949123790

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 201103

ER -

Highly temperature insensitive, deep-well 4.8 μm emitting quantum cascade semiconductor lasers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this