Highly uniform resistive switching characteristics of Ti/TaOx/ITO memristor devices for neuromorphic system

Dongyeol Ju; Jang Hyun Kim; Sungjun Kim

doi:10.1016/j.jallcom.2023.170920

Highly uniform resistive switching characteristics of Ti/TaO_x/ITO memristor devices for neuromorphic system

Dongyeol Ju, Jang Hyun Kim, Sungjun Kim

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

In this study, we focused on the uniformity of resistance states of Ti/TaO_x/ITO devices and the possibility of using them in neuromorphic applications under DC and pulse measurement conditions. The thickness and chemical composition of the devices was verified by transmission electron microscopy (TEM). First, the I-V curves of the devices were controlled with the compliance current and reset voltage. In addition, the multi-level characteristics were demonstrated through DC sweeps and pulses for high-density memory and neuromorphic systems. The linearity of potentiation and depression was then improved to seek high accuracy of pattern recognition in a neural network. Finally, spike-timing-dependent plasticity (STDP) was performed (including potentiation and depression) to mimic Hebbian learning of the nerve system.

Original language	English
Article number	170920
Journal	Journal of Alloys and Compounds
Volume	961
DOIs	https://doi.org/10.1016/j.jallcom.2023.170920
State	Published - 25 Oct 2023

Keywords

Neuromorphic system
Resistive switching
Spike-timing-dependent plasticity (STDP)
Synaptic plasticity

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10.1016/j.jallcom.2023.170920

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@article{3b51339f5b694c89b974f49e2e45d57f,

title = "Highly uniform resistive switching characteristics of Ti/TaOx/ITO memristor devices for neuromorphic system",

abstract = "In this study, we focused on the uniformity of resistance states of Ti/TaOx/ITO devices and the possibility of using them in neuromorphic applications under DC and pulse measurement conditions. The thickness and chemical composition of the devices was verified by transmission electron microscopy (TEM). First, the I-V curves of the devices were controlled with the compliance current and reset voltage. In addition, the multi-level characteristics were demonstrated through DC sweeps and pulses for high-density memory and neuromorphic systems. The linearity of potentiation and depression was then improved to seek high accuracy of pattern recognition in a neural network. Finally, spike-timing-dependent plasticity (STDP) was performed (including potentiation and depression) to mimic Hebbian learning of the nerve system.",

keywords = "Neuromorphic system, Resistive switching, Spike-timing-dependent plasticity (STDP), Synaptic plasticity",

author = "Dongyeol Ju and Kim, {Jang Hyun} and Sungjun Kim",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

month = oct,

day = "25",

doi = "10.1016/j.jallcom.2023.170920",

language = "English",

volume = "961",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Highly uniform resistive switching characteristics of Ti/TaOx/ITO memristor devices for neuromorphic system

AU - Ju, Dongyeol

AU - Kim, Jang Hyun

AU - Kim, Sungjun

PY - 2023/10/25

Y1 - 2023/10/25

N2 - In this study, we focused on the uniformity of resistance states of Ti/TaOx/ITO devices and the possibility of using them in neuromorphic applications under DC and pulse measurement conditions. The thickness and chemical composition of the devices was verified by transmission electron microscopy (TEM). First, the I-V curves of the devices were controlled with the compliance current and reset voltage. In addition, the multi-level characteristics were demonstrated through DC sweeps and pulses for high-density memory and neuromorphic systems. The linearity of potentiation and depression was then improved to seek high accuracy of pattern recognition in a neural network. Finally, spike-timing-dependent plasticity (STDP) was performed (including potentiation and depression) to mimic Hebbian learning of the nerve system.

AB - In this study, we focused on the uniformity of resistance states of Ti/TaOx/ITO devices and the possibility of using them in neuromorphic applications under DC and pulse measurement conditions. The thickness and chemical composition of the devices was verified by transmission electron microscopy (TEM). First, the I-V curves of the devices were controlled with the compliance current and reset voltage. In addition, the multi-level characteristics were demonstrated through DC sweeps and pulses for high-density memory and neuromorphic systems. The linearity of potentiation and depression was then improved to seek high accuracy of pattern recognition in a neural network. Finally, spike-timing-dependent plasticity (STDP) was performed (including potentiation and depression) to mimic Hebbian learning of the nerve system.

KW - Neuromorphic system

KW - Resistive switching

KW - Spike-timing-dependent plasticity (STDP)

KW - Synaptic plasticity

UR - http://www.scopus.com/inward/record.url?scp=85163553381&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2023.170920

DO - 10.1016/j.jallcom.2023.170920

M3 - Article

AN - SCOPUS:85163553381

SN - 0925-8388

VL - 961

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 170920

ER -

Highly uniform resistive switching characteristics of Ti/TaO_x/ITO memristor devices for neuromorphic system

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Keywords

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