@inproceedings{ea0454f22c9e416fb545e1370b31043e,
title = "Hot carrier degradation in nanowire (NW) FinFETs",
abstract = "Hot carrier reliability of a nanowire Ω-FinFET is investigated for the first time. Hot holes injected into the gate oxide via hot-carrier injection (HCI) at the silicon (Si) - silicon dioxide (SiO2) interface of Ω-FinFETs results in the formation of dangling silicon bonds due to the breaking of silicon-hydrogen bonds and lead to high interface traps generation. The trapping and/or bond breaking creates oxide charge and interface traps affect the Coulomb mobility. A quasi-two dimensional (quasi-2D) physics-based screening Coulomb scattering mobility model has been developed and implemented in Synopsys Sentaurus Device simulator.",
author = "Maiti, {T. K.} and Bera, {M. K.} and Mahato, {S. S.} and P. Chakraborty and C. Mahata and M. Sengupta and A. Chakraborty and Maiti, {C. K.}",
year = "2008",
doi = "10.1109/IPFA.2008.4588213",
language = "English",
isbn = "1424420393",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
booktitle = "2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
note = "2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA ; Conference date: 07-07-2008 Through 11-07-2008",
}