Hot carrier degradation in nanowire (NW) FinFETs

T. K. Maiti, M. K. Bera, S. S. Mahato, P. Chakraborty, C. Mahata, M. Sengupta, A. Chakraborty, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Hot carrier reliability of a nanowire Ω-FinFET is investigated for the first time. Hot holes injected into the gate oxide via hot-carrier injection (HCI) at the silicon (Si) - silicon dioxide (SiO2) interface of Ω-FinFETs results in the formation of dangling silicon bonds due to the breaking of silicon-hydrogen bonds and lead to high interface traps generation. The trapping and/or bond breaking creates oxide charge and interface traps affect the Coulomb mobility. A quasi-two dimensional (quasi-2D) physics-based screening Coulomb scattering mobility model has been developed and implemented in Synopsys Sentaurus Device simulator.

Original languageEnglish
Title of host publication2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs
StatePublished - 2008
Event2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore
Duration: 7 Jul 200811 Jul 2008

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Country/TerritorySingapore
CitySingapore
Period7/07/0811/07/08

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