Hydrogen passivation effect on the yellowgreen emission band and bound exciton in n - ZnO

Moon Deock Kim, Jae Eung Oh, Song Gang Kim, Woo Chul Yang

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13 Scopus citations

Abstract

Photoluminescence (PL) measurements performed on as-grown, hydrogenated, and annealed n-type ZnO bulk samples investigated the origins of their yellow (2.10 eV) and green (2.43 eV) emission bands. After hydrogenation, the defect-related peak at 2.10 eV was no longer present in the room temperature PL spectrum, the peak intensity at 2.43 eV was unchanged, and the intensity of the emission peak at 3.27 eV increased significantly. These results indicate that yellow band emission is due to oxygen vacancies, as the emission peak at 2.10 eV disappears when hydrogen atoms passivate these vacancies. The emission peak at 2.43 eV originates from complexes between oxygen vacancies and other crystal defects. We discuss the shallow donor impurities arising due to these hydrogen atoms in the ZnO bulk sample.

Original languageEnglish
Pages (from-to)768-770
Number of pages3
JournalSolid State Communications
Volume151
Issue number10
DOIs
StatePublished - May 2011

Keywords

  • A. Semiconductors
  • B. Crystal growth
  • C. Impurities in semiconductors
  • D. Optical properties

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