@inproceedings{be1521c4763b4ef5ab62790dd4db65bb,
title = "Hydrogenation effect of InGaP grown on GaAs by molecular beam epitaxy",
abstract = "Hydrogenation effects on the electrical properties of n-type and undoped InGaP epilayers lattice matched to GaAs were investigated. It was found that hydrogenation under proper conditions can result in a Au/n-InGaP Schottky diode with good rectifying characteristics as well as effective defect passivation. These improvement were thought to result from the atomic hydrogen diffusion into InGaP which neutralized Si donors and passivated recombination centers near the surface.",
author = "Kim, {M. D.} and Park, {H. S.} and Kim, {T. I.} and Lee, {J. Y.} and Kwon, {Y. H.} and Kim, {D. Y.} and Cho, {H. Y.}",
note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",
year = "1997",
doi = "10.1109/ISCS.1998.711642",
language = "English",
isbn = "0780338839",
series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "307--310",
editor = "Mike Melloch and Reed, {Mark A.}",
booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
address = "United States",
}