Hydrogenation effect on silicon on sapphire grown by rapid thermal chemical vapor deposition

Hoon Young Cho, Chan Jin Park

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Single crystalline Si epilayers were grown on sapphire (1 1̄ 0 2) substrates through a three-step growth method by rapid thermal chemical vapor deposition (RTCVD). Hydrogenation of the epilayers was performed by the hydrogen-plasma exposure (HPE) in a remote plasma chemical vapor deposition (RPCVD) system, following rapid thermal annealing. It was found that the hydrogenation treatment improves the crystallinity of the Si epilayer as well as the electrical properties of Si epilayers. After hydrogenation, especially, the intensity of the deep level defects which are responsible for the lattice mismatch between Si and the sapphire substrate decreases. Also, dislocations and microtwins are reduced remarkably, improving the crystallinity. In Schottky diodes fabricated on hydrogenation-processed Si epilayers, the leakage current decreases one order of magnitude in comparison to non-hydrogenated samples. It is suggested that these characteristics could be explained by the hydrogen incorporation at defects.

Original languageEnglish
Pages (from-to)489-494
Number of pages6
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume16
Issue number3-4
DOIs
StatePublished - Mar 2003
EventSymposium H of the Spring Meeting of the Europe (E-MRS-02H) - Strasbourgh, France
Duration: 18 Jun 200221 Jun 2002

Keywords

  • Deep level defects
  • DLTS
  • Hydrogenation
  • RTCVD
  • Silicon on sapphire (SOS)

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