Hydroxylamine additive enabled interface trap reduction for enhanced fullerene-based n-type organic transistors

Solution-processable organic semiconductors present excellent structural tunability, enabling the regulation of their electrical characteristics through doping and additive engineering. In this study, we demonstrate charge transport enhancement in n-type organic field-effect transistors (OFETs) based on [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) with hydroxylamine (HoA) additives. The PCBM OFETs with optimized HoA content exhibited electron mobility enhanced by over twofold compared to that of pristine devices, along with a substantial negative shift in threshold voltage. These improvements would be attributed to interface trap reduction, originating from the synergistic hydrogen-bonding interaction between the PCBM and HoA additives. These findings suggest that the inclusion of HoA additives in n-type organic semiconductors can significantly enhance the electron transport properties of n-type organic transistors and related devices.