Hysteresis I-V nature of mechanically exfoliated graphene FET

A. Kathalingam, V. Senthilkumar, Jin Koo Rhee

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Graphene is an attractive material for device applications due to its excellent electrical and mechanical properties. The mechanical exfoliation is an attractive method to fabricate graphene devices using mono and multilayer graphene flakes. As the graphene is very sensitive to atmosphere the occurrence of hysteresis and p-doping is common. This paper reports electrical characterization and hysteresis effect of graphene field effect transistor (FET) fabricated using mechanically exfoliated graphene flakes. Raman spectra and atomic force microscopy techniques have been used to examine the quality and thickness of the exfoliated graphene. This fabricated graphene FET has shown hysteresis nature with p-type doping. The possible reason for the observed hysteresis and p-doping has been explained.

Original languageEnglish
Pages (from-to)1303-1308
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume25
Issue number3
DOIs
StatePublished - Mar 2014

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