Impact of bias stability for crystalline InZnO thin-film transistors

Hojoong Kim; Daehwan Choi; Solah Park; Kyung Park; Hyun Woo Park; Kwun Bum Chung; Jang Yeon Kwon

doi:10.1063/1.4985295

Impact of bias stability for crystalline InZnO thin-film transistors

Hojoong Kim, Daehwan Choi, Solah Park, Kyung Park, Hyun Woo Park, Kwun Bum Chung, Jang Yeon Kwon

Department of Physics

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32 Scopus citations

Abstract

Crystallized InZnO thin-film transistors (IZO TFTs) are investigated to identify a potential for the maintenance of high electrical performances with a consistent stability. The transition from an amorphous to a crystallization structure appeared at an annealing temperature around 800 °C, and it was observed using transmission electron microscopy and time-of-flight secondary ion mass spectrometry analysis. The field-effect mobility of the crystallized IZO TFTs was boosted up to 53.58 cm²/V s compared with the 11.79 cm²/V s of the amorphous devices, and the bias stability under the negative stress was greatly enhanced even under illumination. The defect states related to the oxygen vacancy near the conduction band edge decreased after the crystallization, which is a form of electrical structure evidence for the reliability impact regarding the crystallized IZO TFTs.

Original language	English
Article number	232104
Journal	Applied Physics Letters
Volume	110
Issue number	23
DOIs	https://doi.org/10.1063/1.4985295
State	Published - 5 Jun 2017

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@article{8d050f24d32a4f2989ab5babe976cea4,

title = "Impact of bias stability for crystalline InZnO thin-film transistors",

abstract = "Crystallized InZnO thin-film transistors (IZO TFTs) are investigated to identify a potential for the maintenance of high electrical performances with a consistent stability. The transition from an amorphous to a crystallization structure appeared at an annealing temperature around 800 °C, and it was observed using transmission electron microscopy and time-of-flight secondary ion mass spectrometry analysis. The field-effect mobility of the crystallized IZO TFTs was boosted up to 53.58 cm2/V s compared with the 11.79 cm2/V s of the amorphous devices, and the bias stability under the negative stress was greatly enhanced even under illumination. The defect states related to the oxygen vacancy near the conduction band edge decreased after the crystallization, which is a form of electrical structure evidence for the reliability impact regarding the crystallized IZO TFTs.",

author = "Hojoong Kim and Daehwan Choi and Solah Park and Kyung Park and Park, {Hyun Woo} and Chung, {Kwun Bum} and Kwon, {Jang Yeon}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = jun,

day = "5",

doi = "10.1063/1.4985295",

language = "English",

volume = "110",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Impact of bias stability for crystalline InZnO thin-film transistors

AU - Kim, Hojoong

AU - Choi, Daehwan

AU - Park, Solah

AU - Park, Kyung

AU - Park, Hyun Woo

AU - Chung, Kwun Bum

AU - Kwon, Jang Yeon

PY - 2017/6/5

Y1 - 2017/6/5

N2 - Crystallized InZnO thin-film transistors (IZO TFTs) are investigated to identify a potential for the maintenance of high electrical performances with a consistent stability. The transition from an amorphous to a crystallization structure appeared at an annealing temperature around 800 °C, and it was observed using transmission electron microscopy and time-of-flight secondary ion mass spectrometry analysis. The field-effect mobility of the crystallized IZO TFTs was boosted up to 53.58 cm2/V s compared with the 11.79 cm2/V s of the amorphous devices, and the bias stability under the negative stress was greatly enhanced even under illumination. The defect states related to the oxygen vacancy near the conduction band edge decreased after the crystallization, which is a form of electrical structure evidence for the reliability impact regarding the crystallized IZO TFTs.

AB - Crystallized InZnO thin-film transistors (IZO TFTs) are investigated to identify a potential for the maintenance of high electrical performances with a consistent stability. The transition from an amorphous to a crystallization structure appeared at an annealing temperature around 800 °C, and it was observed using transmission electron microscopy and time-of-flight secondary ion mass spectrometry analysis. The field-effect mobility of the crystallized IZO TFTs was boosted up to 53.58 cm2/V s compared with the 11.79 cm2/V s of the amorphous devices, and the bias stability under the negative stress was greatly enhanced even under illumination. The defect states related to the oxygen vacancy near the conduction band edge decreased after the crystallization, which is a form of electrical structure evidence for the reliability impact regarding the crystallized IZO TFTs.

UR - http://www.scopus.com/inward/record.url?scp=85020721143&partnerID=8YFLogxK

U2 - 10.1063/1.4985295

DO - 10.1063/1.4985295

M3 - Article

AN - SCOPUS:85020721143

SN - 0003-6951

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232104

ER -

Impact of bias stability for crystalline InZnO thin-film transistors

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