Impact of plasma nitridation method on Vfb shift and the reliability of CMOSFETs

Dong Chan Kim, Mann Ho Cho, Jin Mwa Heo, Bon Young Koo, Chul Sung Kim, Young Jin Noh, Ji Hyun Kim, Kwun Bum Chung, Yugyun Shin, Dae Won Moon, U. In Chung, Joo Tae Moon

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The performance of CMOSFETs with plasma-nitridation (PN) method for gate oxynitride was intensively investigated. The plasma nitridation method to suppress the negative shift of flat band voltage and gate tunneling current as well as to improve the reliability of MOSFET was proposed through our experiment. Microwave source (2.45GHz) plasma nitridation reduces the transition layer (sub-oxide) of nitrided oxide and nitrogen incorporation at the SiON/Si-sub interface, eventually suppresses the flat band voltage negative shift, and improves gate tunneling current, mobility, TDDB, and NBTI.

Original languageEnglish
Title of host publicationPhysics and Chemistry of SiO2 and the Si-SiO2 Interface-5
PublisherElectrochemical Society Inc.
Pages233-241
Number of pages9
Edition1
ISBN (Electronic)9781607685395
StatePublished - 2006
Event5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: 16 Oct 200520 Oct 2005

Publication series

NameECS Transactions
Number1
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityLos Angeles, CA
Period16/10/0520/10/05

Fingerprint

Dive into the research topics of 'Impact of plasma nitridation method on Vfb shift and the reliability of CMOSFETs'. Together they form a unique fingerprint.

Cite this