@inproceedings{1a85aea4be864b4586d0074805463652,
title = "Impact of plasma nitridation method on Vfb shift and the reliability of CMOSFETs",
abstract = "The performance of CMOSFETs with plasma-nitridation (PN) method for gate oxynitride was intensively investigated. The plasma nitridation method to suppress the negative shift of flat band voltage and gate tunneling current as well as to improve the reliability of MOSFET was proposed through our experiment. Microwave source (2.45GHz) plasma nitridation reduces the transition layer (sub-oxide) of nitrided oxide and nitrogen incorporation at the SiON/Si-sub interface, eventually suppresses the flat band voltage negative shift, and improves gate tunneling current, mobility, TDDB, and NBTI.",
author = "Kim, {Dong Chan} and Cho, {Mann Ho} and Heo, {Jin Mwa} and Koo, {Bon Young} and Kim, {Chul Sung} and Noh, {Young Jin} and Kim, {Ji Hyun} and Chung, {Kwun Bum} and Yugyun Shin and Moon, {Dae Won} and Chung, {U. In} and Moon, {Joo Tae}",
year = "2006",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "1",
pages = "233--241",
booktitle = "Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5",
address = "United States",
edition = "1",
note = "5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society ; Conference date: 16-10-2005 Through 20-10-2005",
}