Impact of the metal-gate material properties in FinFET (Versus FD-SOI MOSFET) on High-κ/Metal-Gate work-function variation

Hyohyun Nam, Changhwan Shin, Jung Dong Park

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The 3-D technology computer-aided design simulations were performed with four metal-gate materials (i.e., titanium nitride, tungsten nitride, tantalum nitride, and molybdenum nitride) to quantitatively estimate the magnitude of work-function variation (WFV)-induced threshold-voltage variation (WFV-induced σ VTH) in high-κ/metal-gate (HK/MG) MOSFETs [e.g., fin-shaped field-effect transistor (FinFET) and fully depleted silicon-on-insulator MOSFETs]. We found that the extended gate area effect in FinFETs extensively varied depending on the gate materials used. In order to substantially suppress the WFV-induced σ VTH in HK/MG complementary metal-oxide-semiconductor technology, a new metal-gate material with the following characteristics should be developed: 1) higher standard deviation of probability for all grains and 2) lower standard deviation of WF values for all grains.

Original languageEnglish
Article number8488598
Pages (from-to)4780-4785
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume65
Issue number11
DOIs
StatePublished - Nov 2018

Keywords

  • Characterization
  • complementary metal-oxide-semiconductor (CMOS)
  • fin-shaped field-effect transistor (FinFET)
  • fully depleted silicon-on-insulator (FD-SOI)
  • gate material
  • MOSFET
  • ratio of average grain size to gate area (RGG)
  • variability
  • work-function variation (WFV)

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