Abstract
The 3-D technology computer-aided design simulations were performed with four metal-gate materials (i.e., titanium nitride, tungsten nitride, tantalum nitride, and molybdenum nitride) to quantitatively estimate the magnitude of work-function variation (WFV)-induced threshold-voltage variation (WFV-induced σ VTH) in high-κ/metal-gate (HK/MG) MOSFETs [e.g., fin-shaped field-effect transistor (FinFET) and fully depleted silicon-on-insulator MOSFETs]. We found that the extended gate area effect in FinFETs extensively varied depending on the gate materials used. In order to substantially suppress the WFV-induced σ VTH in HK/MG complementary metal-oxide-semiconductor technology, a new metal-gate material with the following characteristics should be developed: 1) higher standard deviation of probability for all grains and 2) lower standard deviation of WF values for all grains.
Original language | English |
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Article number | 8488598 |
Pages (from-to) | 4780-4785 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 65 |
Issue number | 11 |
DOIs | |
State | Published - Nov 2018 |
Keywords
- Characterization
- complementary metal-oxide-semiconductor (CMOS)
- fin-shaped field-effect transistor (FinFET)
- fully depleted silicon-on-insulator (FD-SOI)
- gate material
- MOSFET
- ratio of average grain size to gate area (RGG)
- variability
- work-function variation (WFV)