Abstract
The effects of thermal treatments on the electrical conduction properties for the unintentionallydoped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.
Original language | English |
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Pages (from-to) | 2774-2777 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 59 |
Issue number | 4 |
DOIs | |
State | Published - 14 Oct 2011 |
Keywords
- Conductivity
- Effective mobility
- Rapid thermal annealing
- Unintentionally-doped ZnO