TY - JOUR
T1 - Improved Electron Transport in Ambipolar Organic Field-Effect Transistors with PMMA/Polyurethane Blend Dielectrics
AU - Tabi, Grace Dansoa
AU - Nketia-Yawson, Benjamin
AU - Jo, Jea Woong
AU - Noh, Young Yong
N1 - Publisher Copyright:
© 2020, The Polymer Society of Korea and Springer.
PY - 2020/12
Y1 - 2020/12
N2 - We report improved electron transport in solution-processed ambipolar organic field-effect transistors (OFETs) employing polymer dielectric blends of low-k poly(methyl methacrylate) (PMMA) and polyurethane (PU) elastomer. Ambipolar poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) OFETs typically showed an unbalanced hole and electron mobilities of 8.7 ± 0.4 × 10−4 and 2.0±0.1 × 10−4cm2V−1V−1 respectively, using neat PMMA gate dielectric. By controlling the blending ratio of PU (0∼50 v%) in the PMMA-PU blend dielectrics, we tuned the charge carrier transport in the F8BT OFETs. The electron mobility gradually increases significantly, resulting in nearly perfect ambipolar characteristics with hole and electron mobilities of 6.0 ± 0.7 × 10−4 and 9.7 ± 0.4 × 10−4 cm2V−1V−1 respectively in PMMA: PU blend of 50:50 v%. The remarkable trend ensues from trapping of hole carriers at the dielectric/semiconductor by the -N-H- and carbonyl group (C=O) interface dipoles in the PU dielectric. The PMMA-PU blend dielectrics demonstrate excellent potentials for high-performance ambipolar OFETs, inverters, and complementary circuits. [Figure not available: see fulltext.].
AB - We report improved electron transport in solution-processed ambipolar organic field-effect transistors (OFETs) employing polymer dielectric blends of low-k poly(methyl methacrylate) (PMMA) and polyurethane (PU) elastomer. Ambipolar poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) OFETs typically showed an unbalanced hole and electron mobilities of 8.7 ± 0.4 × 10−4 and 2.0±0.1 × 10−4cm2V−1V−1 respectively, using neat PMMA gate dielectric. By controlling the blending ratio of PU (0∼50 v%) in the PMMA-PU blend dielectrics, we tuned the charge carrier transport in the F8BT OFETs. The electron mobility gradually increases significantly, resulting in nearly perfect ambipolar characteristics with hole and electron mobilities of 6.0 ± 0.7 × 10−4 and 9.7 ± 0.4 × 10−4 cm2V−1V−1 respectively in PMMA: PU blend of 50:50 v%. The remarkable trend ensues from trapping of hole carriers at the dielectric/semiconductor by the -N-H- and carbonyl group (C=O) interface dipoles in the PU dielectric. The PMMA-PU blend dielectrics demonstrate excellent potentials for high-performance ambipolar OFETs, inverters, and complementary circuits. [Figure not available: see fulltext.].
KW - ambipolar polymer semiconductor
KW - organic field-effect transistors
KW - PMMA
KW - polymer dielectric blend
KW - polyurethane
UR - http://www.scopus.com/inward/record.url?scp=85097008672&partnerID=8YFLogxK
U2 - 10.1007/s13233-020-8161-6
DO - 10.1007/s13233-020-8161-6
M3 - Article
AN - SCOPUS:85097008672
SN - 1598-5032
VL - 28
SP - 1248
EP - 1252
JO - Macromolecular Research
JF - Macromolecular Research
ER -