@inproceedings{1701c0fd899a431caff3d314a7d45147,
title = "Improved field effect mobility and stability of indium-free oxide thin film transistor by metal capping layer",
abstract = "In this work, to get better electrical properties, metal capping layer and lift-off lithography process of a new type of Indium-free amorphous thin films and associated thin-film transistors (TFTs) were investigated. As a result, optimized TFTs showed high mobility (>30cm2/Vs) and excellent stability than conventional InZnO TFTs.",
keywords = "Amorphous oxide semiconductors, BaSnO3, High mobility, Stability, Thin film transistors",
author = "Park, {Ji Min} and Nahm, {Ho Hyun} and Kim, {Hyun Suk}",
note = "Publisher Copyright: {\textcopyright} 2019 ITE and SID.; 26th International Display Workshops, IDW 2019 ; Conference date: 27-11-2019 Through 29-11-2019",
year = "2019",
language = "English",
series = "Proceedings of the International Display Workshops",
publisher = "International Display Workshops",
pages = "563--566",
booktitle = "26th International Display Workshops, IDW 2019",
}