@inproceedings{d3cfc64cbb50448a95f26563be2dc211,
title = "Improved gradual reset phenomenon in SiNx-based RRAM by diode-connected structure",
abstract = "In this work, we have confirmed that dependent reset switching phenomenon of SiNx/SiO2 RRAM is dependent on stop voltage (VSTOP) in both DC and pulse operation. In addition, it was confirmed that improved gradual resistance change can be obtained by adjusting the amplitude of the applied reset pulse. By process simulation and empirical modeling of resistance change of the device, it is confirmed that the voltage distribution can be controlled only in the reset operation, resulting in more linear and gradual resistance change phenomenon even though same reset pulse is used.",
author = "Kim, {Min Hwi} and Suhyun Bang and Kim, {Tae Hyeon} and Lee, {Dong Keun} and Sungjun Kim and Seongjae Cho and Park, {Byung Gook}",
note = "Publisher Copyright: {\textcopyright} 2019 JSAP.; 24th Silicon Nanoelectronics Workshop, SNW 2019 ; Conference date: 09-06-2019 Through 10-06-2019",
year = "2019",
month = jun,
doi = "10.23919/SNW.2019.8782935",
language = "English",
series = "2019 Silicon Nanoelectronics Workshop, SNW 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 Silicon Nanoelectronics Workshop, SNW 2019",
address = "United States",
}