Improved intrinsic nonlinear characteristics of Ta2O5/Al2O3-based resistive random-access memory for high-density memory applications

Ji Ho Ryu, Sungjun Kim

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The major hindrance for high-density application of two-terminal resistive random-access memory (RRAM) array design is unintentional sneak path leakage through adjacent cells. Herein, we propose a bilayer structure of Ta2O5/Al2O3-based bipolar type RRAM by evaluating the intrinsic nonlinear characteristics without integration with an additional transistor and selector device. We conducted X-ray photoelectron spectroscopy (XPS) analysis with different etching times to verify Ta2O5/Al2O3 layers deposited on the TiN bottom electrode. The optimized nonlinear properties with current suppression are obtained by varying Al2O3 thickness. The maximum nonlinearity (~71) is achieved in a Ta2O5/Al2O3 (3 nm) sample. Furthermore, we estimated the comparative read margin based on the I-V characteristics with different thicknesses of Al2O3 film for the crossbar array applications. We expect that this study about the effect of the Al2O3 tunnel barrier thickness on Ta2O5-based memristors could provide a guideline for developing a selector-less RRAM application.

Original languageEnglish
Article number4201
JournalMaterials
Volume13
Issue number18
DOIs
StatePublished - Sep 2020

Keywords

  • Conduction mechanism
  • F-N tunneling
  • Memristor
  • Nonlinearity
  • Read margin
  • RRAM
  • XPS

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