Abstract
The major hindrance for high-density application of two-terminal resistive random-access memory (RRAM) array design is unintentional sneak path leakage through adjacent cells. Herein, we propose a bilayer structure of Ta2O5/Al2O3-based bipolar type RRAM by evaluating the intrinsic nonlinear characteristics without integration with an additional transistor and selector device. We conducted X-ray photoelectron spectroscopy (XPS) analysis with different etching times to verify Ta2O5/Al2O3 layers deposited on the TiN bottom electrode. The optimized nonlinear properties with current suppression are obtained by varying Al2O3 thickness. The maximum nonlinearity (~71) is achieved in a Ta2O5/Al2O3 (3 nm) sample. Furthermore, we estimated the comparative read margin based on the I-V characteristics with different thicknesses of Al2O3 film for the crossbar array applications. We expect that this study about the effect of the Al2O3 tunnel barrier thickness on Ta2O5-based memristors could provide a guideline for developing a selector-less RRAM application.
Original language | English |
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Article number | 4201 |
Journal | Materials |
Volume | 13 |
Issue number | 18 |
DOIs | |
State | Published - Sep 2020 |
Keywords
- Conduction mechanism
- F-N tunneling
- Memristor
- Nonlinearity
- Read margin
- RRAM
- XPS