Improved memory effect of ZnO nanorods embedded in an insulating polymethylmethacrylate layer

S. Valanarasu; A. Kathalingam; Jin Koo Rhee; R. Chandramohan; T. A. Vijayan; M. Karunakaran

doi:10.1166/jnn.2015.9034

Improved memory effect of ZnO nanorods embedded in an insulating polymethylmethacrylate layer

S. Valanarasu, A. Kathalingam, Jin Koo Rhee, R. Chandramohan, T. A. Vijayan, M. Karunakaran

Millimeterwave Innovation Technology Research Center

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Fabrication and characterization of memory devices using ZnO nanorod layer grown by chemicalbath method is reported. The fabricated memory device was found exhibit electrical bistability and nonvolatile memory phenomenon. An additional Polymethylmethacrylate (PMMA) polymer layer coated on ITO substrate prior to nanorod deposition has been found improve the LRS/HRS ratio of the device. The current-voltage characteristics of the memory devices are discussed in terms of formation and rupture of conductive filaments. The devices have shown consistent electrical bistable behavior even for 105 resistance-switching cycles. This hybrid ITO/PMMA-ZnO NRs/Al device has potential applications in the field of bistable random access memories.

Original language	English
Pages (from-to)	1416-1420
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	15
Issue number	2
DOIs	https://doi.org/10.1166/jnn.2015.9034
State	Published - 1 Jan 2015

Keywords

Filaments
Organic memory
Polymer
Solution processing
ZnO nanorods

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10.1166/jnn.2015.9034

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title = "Improved memory effect of ZnO nanorods embedded in an insulating polymethylmethacrylate layer",

abstract = "Fabrication and characterization of memory devices using ZnO nanorod layer grown by chemicalbath method is reported. The fabricated memory device was found exhibit electrical bistability and nonvolatile memory phenomenon. An additional Polymethylmethacrylate (PMMA) polymer layer coated on ITO substrate prior to nanorod deposition has been found improve the LRS/HRS ratio of the device. The current-voltage characteristics of the memory devices are discussed in terms of formation and rupture of conductive filaments. The devices have shown consistent electrical bistable behavior even for 105 resistance-switching cycles. This hybrid ITO/PMMA-ZnO NRs/Al device has potential applications in the field of bistable random access memories.",

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T1 - Improved memory effect of ZnO nanorods embedded in an insulating polymethylmethacrylate layer

AU - Valanarasu, S.

AU - Kathalingam, A.

AU - Rhee, Jin Koo

AU - Chandramohan, R.

AU - Vijayan, T. A.

AU - Karunakaran, M.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Fabrication and characterization of memory devices using ZnO nanorod layer grown by chemicalbath method is reported. The fabricated memory device was found exhibit electrical bistability and nonvolatile memory phenomenon. An additional Polymethylmethacrylate (PMMA) polymer layer coated on ITO substrate prior to nanorod deposition has been found improve the LRS/HRS ratio of the device. The current-voltage characteristics of the memory devices are discussed in terms of formation and rupture of conductive filaments. The devices have shown consistent electrical bistable behavior even for 105 resistance-switching cycles. This hybrid ITO/PMMA-ZnO NRs/Al device has potential applications in the field of bistable random access memories.

AB - Fabrication and characterization of memory devices using ZnO nanorod layer grown by chemicalbath method is reported. The fabricated memory device was found exhibit electrical bistability and nonvolatile memory phenomenon. An additional Polymethylmethacrylate (PMMA) polymer layer coated on ITO substrate prior to nanorod deposition has been found improve the LRS/HRS ratio of the device. The current-voltage characteristics of the memory devices are discussed in terms of formation and rupture of conductive filaments. The devices have shown consistent electrical bistable behavior even for 105 resistance-switching cycles. This hybrid ITO/PMMA-ZnO NRs/Al device has potential applications in the field of bistable random access memories.

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KW - Organic memory

KW - Polymer

KW - Solution processing

KW - ZnO nanorods

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JO - Journal of Nanoscience and Nanotechnology

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Improved memory effect of ZnO nanorods embedded in an insulating polymethylmethacrylate layer

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Keywords

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