Improved performance of graphene oxide based resistive memory devices through hydrogen plasma

P. Justin Jesuraj, R. Parameshwari, K. Jeganathan

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

We report the improved performance of graphene oxide (GO) based resistive random-access memory devices (ReRAM) through mild hydrogen plasma treatment. The threshold voltage of the ReRAM device is successfully reduced from 2.6 to 1.8 V together with an enhanced ON/OFF ratio of 103 with the help of hydrogen plasma treated GO (HGO). Significantly, the rise of a weak 2D band in Raman spectrum of HGO reveals the mild reduction of GO by H2 plasma. The concurrent removal of oxygen moieties on basal plane and on edges of graphitic network in GO by the virtue of H2 plasma is argued to contribute enhanced performance in ReRAM devices. The significant diminution of oxygen moieties on GO lattice in HGO infused device reduces the insulating barrier formed at Al/GO interface which reinforced the electron transport. The effective selection of plasma treatment is found to be one of the proficient routes to enhance the storage capabilities of GO based resistive memory devices.

Original languageEnglish
Pages (from-to)62-65
Number of pages4
JournalMaterials Letters
Volume232
DOIs
StatePublished - 1 Dec 2018

Keywords

  • Carbon materials
  • Electrical properties
  • Interfaces
  • Raman

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