TY - JOUR
T1 - Improved rectification characteristics by engineering energy barrier height in TiOx-based RRAM
AU - Kim, Tae Hyeon
AU - Kim, Sungjun
AU - Park, Byung Gook
N1 - Publisher Copyright:
© 2020
PY - 2021/1/15
Y1 - 2021/1/15
N2 - Resistive random access memory (RRAM) is a strong candidate for next-generation memory. Despite its versatility, the sneak path current severely threatens accurate read operations, preventing RRAM from being expanded to high density array. To solve this sneak path current, here we propose a method to enhance a rectification effect through barrier height engineering. We fabricated two TiOx-based devices, Al/TiOx/Al devices as a control group and Cu/TiOx/Al devices as an experimental group, and compare their rectification characteristics. As a result, a rectification ratio in Cu/TiOx/Al devices is much larger than that of Al/TiOx/Al devices, e.g., approximately 122 times for low-resistance-state and 251 times for high-resistance-state. Furthermore, we analyze the energy band diagram considering the bias polarity and electric-field-driven oxygen ion migration. It is confirmed that the rectification effect results from high energy barrier height between Cu top electrode and TiOx.
AB - Resistive random access memory (RRAM) is a strong candidate for next-generation memory. Despite its versatility, the sneak path current severely threatens accurate read operations, preventing RRAM from being expanded to high density array. To solve this sneak path current, here we propose a method to enhance a rectification effect through barrier height engineering. We fabricated two TiOx-based devices, Al/TiOx/Al devices as a control group and Cu/TiOx/Al devices as an experimental group, and compare their rectification characteristics. As a result, a rectification ratio in Cu/TiOx/Al devices is much larger than that of Al/TiOx/Al devices, e.g., approximately 122 times for low-resistance-state and 251 times for high-resistance-state. Furthermore, we analyze the energy band diagram considering the bias polarity and electric-field-driven oxygen ion migration. It is confirmed that the rectification effect results from high energy barrier height between Cu top electrode and TiOx.
KW - Energy barrier height
KW - Rectification characteristics
KW - Resistive random access memory
KW - Sneak path current
KW - Titanium oxide
UR - http://www.scopus.com/inward/record.url?scp=85098730213&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2020.111498
DO - 10.1016/j.mee.2020.111498
M3 - Article
AN - SCOPUS:85098730213
SN - 0167-9317
VL - 237
JO - Microelectronic Engineering
JF - Microelectronic Engineering
M1 - 111498
ER -