Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices

Hyeonseung Ji; Yoonseok Lee; Jungang Heo; Sungjun Kim

doi:10.1016/j.jallcom.2023.171096

Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices

Hyeonseung Ji
, Yoonseok Lee
, Jungang Heo
, Sungjun Kim

Department of Electronics & Electrical Engineering

Dongguk University

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

In this study, we investigated the resistive switching (RS) characteristics of ZrO_x/HfO_x bilayer-based resistive random-access memory (RRAM) devices. A 1.5-nm-thick HfO_x layer was deposited by atomic layer deposition (ALD) between the ZrO_x layer and TiN electrode to enhance the RS. Compared to the ZrO_x single-layer device, the bilayer device exhibited a lower high resistance state (HRS) current, which improved endurance and reduced energy consumption due to the insulating HfO_x layer. In addition, a DC endurance of 300 cycles and strong retention characteristics (10,000 s) were achieved in the bilayer device. Furthermore, the multi-level cell (MLC), potentiation, and depression characteristics were evaluated to demonstrate the suitability of the Ti/ZrO_x/HfO_x/TiN device for use as a neuromorphic device. With regard to potentiation and depression, various pulse schemes were employed to improve the asymmetric conductance changes for neuromorphic system applications.

Original language	English
Article number	171096
Journal	Journal of Alloys and Compounds
Volume	962
DOIs	https://doi.org/10.1016/j.jallcom.2023.171096
State	Published - 5 Nov 2023

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

AI semiconductor
Bilayer device
Neuromorphic system
Resistive switching
Synaptic device

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10.1016/j.jallcom.2023.171096

Cite this

@article{edfc8c3c14034f86849cf724fb104258,

title = "Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices",

abstract = "In this study, we investigated the resistive switching (RS) characteristics of ZrOx/HfOx bilayer-based resistive random-access memory (RRAM) devices. A 1.5-nm-thick HfOx layer was deposited by atomic layer deposition (ALD) between the ZrOx layer and TiN electrode to enhance the RS. Compared to the ZrOx single-layer device, the bilayer device exhibited a lower high resistance state (HRS) current, which improved endurance and reduced energy consumption due to the insulating HfOx layer. In addition, a DC endurance of 300 cycles and strong retention characteristics (10,000 s) were achieved in the bilayer device. Furthermore, the multi-level cell (MLC), potentiation, and depression characteristics were evaluated to demonstrate the suitability of the Ti/ZrOx/HfOx/TiN device for use as a neuromorphic device. With regard to potentiation and depression, various pulse schemes were employed to improve the asymmetric conductance changes for neuromorphic system applications.",

keywords = "AI semiconductor, Bilayer device, Neuromorphic system, Resistive switching, Synaptic device",

author = "Hyeonseung Ji and Yoonseok Lee and Jungang Heo and Sungjun Kim",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

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doi = "10.1016/j.jallcom.2023.171096",

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T1 - Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices

AU - Ji, Hyeonseung

AU - Lee, Yoonseok

AU - Heo, Jungang

AU - Kim, Sungjun

PY - 2023/11/5

Y1 - 2023/11/5

N2 - In this study, we investigated the resistive switching (RS) characteristics of ZrOx/HfOx bilayer-based resistive random-access memory (RRAM) devices. A 1.5-nm-thick HfOx layer was deposited by atomic layer deposition (ALD) between the ZrOx layer and TiN electrode to enhance the RS. Compared to the ZrOx single-layer device, the bilayer device exhibited a lower high resistance state (HRS) current, which improved endurance and reduced energy consumption due to the insulating HfOx layer. In addition, a DC endurance of 300 cycles and strong retention characteristics (10,000 s) were achieved in the bilayer device. Furthermore, the multi-level cell (MLC), potentiation, and depression characteristics were evaluated to demonstrate the suitability of the Ti/ZrOx/HfOx/TiN device for use as a neuromorphic device. With regard to potentiation and depression, various pulse schemes were employed to improve the asymmetric conductance changes for neuromorphic system applications.

AB - In this study, we investigated the resistive switching (RS) characteristics of ZrOx/HfOx bilayer-based resistive random-access memory (RRAM) devices. A 1.5-nm-thick HfOx layer was deposited by atomic layer deposition (ALD) between the ZrOx layer and TiN electrode to enhance the RS. Compared to the ZrOx single-layer device, the bilayer device exhibited a lower high resistance state (HRS) current, which improved endurance and reduced energy consumption due to the insulating HfOx layer. In addition, a DC endurance of 300 cycles and strong retention characteristics (10,000 s) were achieved in the bilayer device. Furthermore, the multi-level cell (MLC), potentiation, and depression characteristics were evaluated to demonstrate the suitability of the Ti/ZrOx/HfOx/TiN device for use as a neuromorphic device. With regard to potentiation and depression, various pulse schemes were employed to improve the asymmetric conductance changes for neuromorphic system applications.

KW - AI semiconductor

KW - Bilayer device

KW - Neuromorphic system

KW - Resistive switching

KW - Synaptic device

UR - https://www.scopus.com/pages/publications/85164306029

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DO - 10.1016/j.jallcom.2023.171096

M3 - Article

AN - SCOPUS:85164306029

SN - 0925-8388

VL - 962

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 171096

ER -

Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices

Abstract

UN SDGs

Keywords

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