Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x

Sungjun Kim; Yao Feng Chang; Min Hwi Kim; Byung Gook Park

doi:10.1063/1.4985268

Improved resistive switching characteristics in Ni/SiN_x/p⁺⁺-Si devices by tuning x

Sungjun Kim, Yao Feng Chang, Min Hwi Kim, Byung Gook Park

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

This letter studies the effect of the negative-set on the resistive switching performances of CMOS-compatible Ni/SiN_x/p⁺⁺-Si resistive memory devices by simply tuning x. A Ni/SiN_1.07/p⁺⁺-Si device showed lower power switching (20 μW) and better endurance cycles (10³) compared to a Ni/SiN_0.82/p⁺⁺-Si device because of the improved negative set behavior and initially lower set and reset currents. In addition, we achieved fast switching speed for set (200 ns) and reset (100 ns) processes in the Ni/SiN_1.07/p⁺⁺-Si device. For the Ni/SiN_1.07/p⁺⁺-Si device, fine adjustment of resistance values is attainable by varying the pulse amplitude and width due to the gradual reset switching characteristics. The barrier-height-dependent conduction model is proposed to explain the change in the current level with the x value.

Original language	English
Article number	033509
Journal	Applied Physics Letters
Volume	111
Issue number	3
DOIs	https://doi.org/10.1063/1.4985268
State	Published - 17 Jul 2017

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title = "Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x",

abstract = "This letter studies the effect of the negative-set on the resistive switching performances of CMOS-compatible Ni/SiNx/p++-Si resistive memory devices by simply tuning x. A Ni/SiN1.07/p++-Si device showed lower power switching (20 μW) and better endurance cycles (103) compared to a Ni/SiN0.82/p++-Si device because of the improved negative set behavior and initially lower set and reset currents. In addition, we achieved fast switching speed for set (200 ns) and reset (100 ns) processes in the Ni/SiN1.07/p++-Si device. For the Ni/SiN1.07/p++-Si device, fine adjustment of resistance values is attainable by varying the pulse amplitude and width due to the gradual reset switching characteristics. The barrier-height-dependent conduction model is proposed to explain the change in the current level with the x value.",

author = "Sungjun Kim and Chang, {Yao Feng} and Kim, {Min Hwi} and Park, {Byung Gook}",

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AU - Kim, Sungjun

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N2 - This letter studies the effect of the negative-set on the resistive switching performances of CMOS-compatible Ni/SiNx/p++-Si resistive memory devices by simply tuning x. A Ni/SiN1.07/p++-Si device showed lower power switching (20 μW) and better endurance cycles (103) compared to a Ni/SiN0.82/p++-Si device because of the improved negative set behavior and initially lower set and reset currents. In addition, we achieved fast switching speed for set (200 ns) and reset (100 ns) processes in the Ni/SiN1.07/p++-Si device. For the Ni/SiN1.07/p++-Si device, fine adjustment of resistance values is attainable by varying the pulse amplitude and width due to the gradual reset switching characteristics. The barrier-height-dependent conduction model is proposed to explain the change in the current level with the x value.

AB - This letter studies the effect of the negative-set on the resistive switching performances of CMOS-compatible Ni/SiNx/p++-Si resistive memory devices by simply tuning x. A Ni/SiN1.07/p++-Si device showed lower power switching (20 μW) and better endurance cycles (103) compared to a Ni/SiN0.82/p++-Si device because of the improved negative set behavior and initially lower set and reset currents. In addition, we achieved fast switching speed for set (200 ns) and reset (100 ns) processes in the Ni/SiN1.07/p++-Si device. For the Ni/SiN1.07/p++-Si device, fine adjustment of resistance values is attainable by varying the pulse amplitude and width due to the gradual reset switching characteristics. The barrier-height-dependent conduction model is proposed to explain the change in the current level with the x value.

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Improved resistive switching characteristics in Ni/SiN_x/p⁺⁺-Si devices by tuning x

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