Improvement of characteristics in highly reliable thin film diode with anodic tantalum pentoxide by low temperature annealing conditions

Chan Jae Lee, Sung Jei Hong, Sung Kyu Park, Yong Hoon Kim, Min Gi Kwak, Won Keun Kim, Jeong In Han

Research output: Contribution to journalConference articlepeer-review

Abstract

In this study, the quality of thin film diode (TFD) as a switching device for active-matrix liquid-crystal-displays (AM-LCDs) was enhanced by low temperature annealing conditions with high reliability and good electrical properties. Device was composed with Ta as bottom electrode, anodic Ta2O5 as insulator layer and top electrode. Two types of material such as Ti and Cr were evaluated as a top electrode of the TFD device to optimize the symmetry of current-voltage characteristic curve, respectively. The annealing was done at low temperature conditions below 350°C. The low temperature annealing improved the TFD device with nearly perfect symmetry under high electric field.

Original languageEnglish
Pages (from-to)191-196
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume699
StatePublished - 2002
EventElectrically Based Microstructural Characterization III - Boston, MA, United States
Duration: 26 Nov 200129 Nov 2001

Fingerprint

Dive into the research topics of 'Improvement of characteristics in highly reliable thin film diode with anodic tantalum pentoxide by low temperature annealing conditions'. Together they form a unique fingerprint.

Cite this