Improvement of Electrical Performance of Te/TeO Thin Film Transistors Using Sputtering at Room Temperature

Seung Min Lee; Seong Cheol Jang; Hyun Suk Kim

Improvement of Electrical Performance of Te/TeO Thin Film Transistors Using Sputtering at Room Temperature

Seung Min Lee, Seong Cheol Jang, Hyun Suk Kim

Department of Energy and Materials Engineering

Chungnam National University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Tellurium (Te) is promising material due to its excellent p-type semiconductor properties and power consumption efficiency. In this study, the electrical performances of the Te based transistors were demonstrated by adopting bilayer structure of Te / TeO.

Original language	English
Pages (from-to)	210-212
Number of pages	3
Journal	Proceedings of the International Display Workshops
Volume	29
State	Published - 2022
Event	29th International Display Workshops, IDW 2022 - Fukuoka, Japan Duration: 14 Dec 2022 → 16 Dec 2022

Keywords

Bilayer
CMOS
Tellurium
Tellurium Oxide
thin film transistor

Cite this

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title = "Improvement of Electrical Performance of Te/TeO Thin Film Transistors Using Sputtering at Room Temperature",

abstract = "Tellurium (Te) is promising material due to its excellent p-type semiconductor properties and power consumption efficiency. In this study, the electrical performances of the Te based transistors were demonstrated by adopting bilayer structure of Te / TeO.",

keywords = "Bilayer, CMOS, Tellurium, Tellurium Oxide, thin film transistor",

author = "Lee, {Seung Min} and Jang, {Seong Cheol} and Kim, {Hyun Suk}",

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year = "2022",

language = "English",

volume = "29",

pages = "210--212",

journal = "Proceedings of the International Display Workshops",

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TY - JOUR

T1 - Improvement of Electrical Performance of Te/TeO Thin Film Transistors Using Sputtering at Room Temperature

AU - Lee, Seung Min

AU - Jang, Seong Cheol

AU - Kim, Hyun Suk

PY - 2022

Y1 - 2022

N2 - Tellurium (Te) is promising material due to its excellent p-type semiconductor properties and power consumption efficiency. In this study, the electrical performances of the Te based transistors were demonstrated by adopting bilayer structure of Te / TeO.

AB - Tellurium (Te) is promising material due to its excellent p-type semiconductor properties and power consumption efficiency. In this study, the electrical performances of the Te based transistors were demonstrated by adopting bilayer structure of Te / TeO.

KW - Bilayer

KW - CMOS

KW - Tellurium

KW - Tellurium Oxide

KW - thin film transistor

UR - http://www.scopus.com/inward/record.url?scp=85175237965&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:85175237965

SN - 1883-2490

VL - 29

SP - 210

EP - 212

JO - Proceedings of the International Display Workshops

JF - Proceedings of the International Display Workshops

T2 - 29th International Display Workshops, IDW 2022

Y2 - 14 December 2022 through 16 December 2022

ER -

Improvement of Electrical Performance of Te/TeO Thin Film Transistors Using Sputtering at Room Temperature

Abstract

Keywords

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