Improvement of electrical properties of printed ITO thin films by heat-treatment conditions

Sung Jei Hong; Jong Woong Kim; Jeong In Han

doi:10.1016/j.cap.2010.11.081

Improvement of electrical properties of printed ITO thin films by heat-treatment conditions

Sung Jei Hong
, Jong Woong Kim
, Jeong In Han

Department of Chemical and Biochemical Engineering

Korea Electronics Technology Institute

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

In this study, electrical properties of an indium tin oxide(ITO) thin film fabricated by inkjet printing were improved by optimizing the post heat-treatment conditions. For inkjet printing, 10, 20, and 30 wt% ITO inks were formulated, and they ITO inks were printed onto glass substrate. Then, the printed ITO thin films were heated at 300, 400, 500, and 600 °C under several atmospheric conditions of single step of N₂, air and combination steps using the gases, respectively. As a result, the sheet resistance of the printed ITO thin film was decreased as the concentration of ITO ink and heat-treatment temperature were increased under single step of N₂ atmosphere. In the case of the printed ITO thin film using 30 wt% ITO ink and heat-treatment at 600 °C under a N₂ atmosphere, the improved sheet resistance and optical transmittance of 455 Ω/square and 90%, respectively, were achieved.

Original language	English
Pages (from-to)	S202-S205
Journal	Current Applied Physics
Volume	11
Issue number	1 SUPPL.
DOIs	https://doi.org/10.1016/j.cap.2010.11.081
State	Published - Jan 2011

Keywords

Inkjet printing
ITO ink
Optical transmittance
Post heat-treatment
Sheet resistance

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10.1016/j.cap.2010.11.081

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title = "Improvement of electrical properties of printed ITO thin films by heat-treatment conditions",

abstract = "In this study, electrical properties of an indium tin oxide(ITO) thin film fabricated by inkjet printing were improved by optimizing the post heat-treatment conditions. For inkjet printing, 10, 20, and 30 wt\% ITO inks were formulated, and they ITO inks were printed onto glass substrate. Then, the printed ITO thin films were heated at 300, 400, 500, and 600 °C under several atmospheric conditions of single step of N2, air and combination steps using the gases, respectively. As a result, the sheet resistance of the printed ITO thin film was decreased as the concentration of ITO ink and heat-treatment temperature were increased under single step of N2 atmosphere. In the case of the printed ITO thin film using 30 wt\% ITO ink and heat-treatment at 600 °C under a N2 atmosphere, the improved sheet resistance and optical transmittance of 455 Ω/square and 90\%, respectively, were achieved.",

keywords = "Inkjet printing, ITO ink, Optical transmittance, Post heat-treatment, Sheet resistance",

author = "Hong, \{Sung Jei\} and Kim, \{Jong Woong\} and Han, \{Jeong In\}",

year = "2011",

month = jan,

doi = "10.1016/j.cap.2010.11.081",

language = "English",

volume = "11",

pages = "S202--S205",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "1 SUPPL.",

}

TY - JOUR

T1 - Improvement of electrical properties of printed ITO thin films by heat-treatment conditions

AU - Hong, Sung Jei

AU - Kim, Jong Woong

AU - Han, Jeong In

PY - 2011/1

Y1 - 2011/1

N2 - In this study, electrical properties of an indium tin oxide(ITO) thin film fabricated by inkjet printing were improved by optimizing the post heat-treatment conditions. For inkjet printing, 10, 20, and 30 wt% ITO inks were formulated, and they ITO inks were printed onto glass substrate. Then, the printed ITO thin films were heated at 300, 400, 500, and 600 °C under several atmospheric conditions of single step of N2, air and combination steps using the gases, respectively. As a result, the sheet resistance of the printed ITO thin film was decreased as the concentration of ITO ink and heat-treatment temperature were increased under single step of N2 atmosphere. In the case of the printed ITO thin film using 30 wt% ITO ink and heat-treatment at 600 °C under a N2 atmosphere, the improved sheet resistance and optical transmittance of 455 Ω/square and 90%, respectively, were achieved.

AB - In this study, electrical properties of an indium tin oxide(ITO) thin film fabricated by inkjet printing were improved by optimizing the post heat-treatment conditions. For inkjet printing, 10, 20, and 30 wt% ITO inks were formulated, and they ITO inks were printed onto glass substrate. Then, the printed ITO thin films were heated at 300, 400, 500, and 600 °C under several atmospheric conditions of single step of N2, air and combination steps using the gases, respectively. As a result, the sheet resistance of the printed ITO thin film was decreased as the concentration of ITO ink and heat-treatment temperature were increased under single step of N2 atmosphere. In the case of the printed ITO thin film using 30 wt% ITO ink and heat-treatment at 600 °C under a N2 atmosphere, the improved sheet resistance and optical transmittance of 455 Ω/square and 90%, respectively, were achieved.

KW - Inkjet printing

KW - ITO ink

KW - Optical transmittance

KW - Post heat-treatment

KW - Sheet resistance

UR - https://www.scopus.com/pages/publications/79953214008

U2 - 10.1016/j.cap.2010.11.081

DO - 10.1016/j.cap.2010.11.081

M3 - Article

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SN - 1567-1739

VL - 11

SP - S202-S205

JO - Current Applied Physics

JF - Current Applied Physics

IS - 1 SUPPL.

ER -

Improvement of electrical properties of printed ITO thin films by heat-treatment conditions

Abstract

Keywords

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