Improvement of fabrication technology for InP Gunn devices using trench method

M. R. Kim, S. D. Lee, J. S. Lee, N. S. Kwak, S. D. Kim, J. K. Rhee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We have fabricated InP Gunn diodes using the improved fabrication technology in order to eliminate the problems resulting from the fabrication procedure of InP Gunn diodes for operation at 94 GHz. We see that the developed fabrication procedure using the trench method reduces the stress in InP epi-layers during alloy, and therefore the cracks in epilayers were reduced.

Original languageEnglish
Title of host publication2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008
DOIs
StatePublished - 2008
Event2008 Global Symposium on Millimeter Waves, GSMM 2008 - Nanjing, China
Duration: 21 Apr 200824 Apr 2008

Publication series

Name2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008

Conference

Conference2008 Global Symposium on Millimeter Waves, GSMM 2008
Country/TerritoryChina
CityNanjing
Period21/04/0824/04/08

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