@inproceedings{d0c4ba5458704aa5a95392cf4efe7b6e,
title = "Improvement of fabrication technology for InP Gunn devices using trench method",
abstract = "We have fabricated InP Gunn diodes using the improved fabrication technology in order to eliminate the problems resulting from the fabrication procedure of InP Gunn diodes for operation at 94 GHz. We see that the developed fabrication procedure using the trench method reduces the stress in InP epi-layers during alloy, and therefore the cracks in epilayers were reduced.",
author = "Kim, {M. R.} and Lee, {S. D.} and Lee, {J. S.} and Kwak, {N. S.} and Kim, {S. D.} and Rhee, {J. K.}",
year = "2008",
doi = "10.1109/GSMM.2008.4534546",
language = "English",
isbn = "9781424418855",
series = "2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008",
booktitle = "2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008",
note = "2008 Global Symposium on Millimeter Waves, GSMM 2008 ; Conference date: 21-04-2008 Through 24-04-2008",
}