Improvement of negative bias temperature illumination stability of amorphous IGZO thin-film transistors by water vapor-assisted high-pressure oxygen annealing

Byung Du Ahn; Hyun Suk Kim; Dong Jin Yun; Jin Seong Park; Hyun Jae Kim

doi:10.1149/2.019405jss

Improvement of negative bias temperature illumination stability of amorphous IGZO thin-film transistors by water vapor-assisted high-pressure oxygen annealing

Byung Du Ahn, Hyun Suk Kim, Dong Jin Yun, Jin Seong Park, Hyun Jae Kim

Department of Energy and Materials Engineering

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The effect of high-pressure annealing on the performance and negative bias temperature illumination stress (NBTIS)-induced instability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated. IGZO TFTs that were annealed in a H₂O vapor-assisted high-pressure O₂ atmosphere exhibited significantly improved field-effect mobility and stability against NBTIS compared with those annealed in only high-pressure O₂ or air. Annealing under high-pressure O₂ in the presence of H ₂O vapor effectively reduces oxygen-related defects, which act as subgap states within the bandgap. This phenomenon affects band alignments, including the bandgap and conduction band offset [Δ(E_C-E _F)] of IGZO semiconductors, and is the basis for the improved performance and stability of the TFTs.

Original language	English
Pages (from-to)	Q95-Q98
Journal	ECS Journal of Solid State Science and Technology
Volume	3
Issue number	5
DOIs	https://doi.org/10.1149/2.019405jss
State	Published - 2014

Access to Document

10.1149/2.019405jss

Cite this

@article{dc2c650bfc9345d69914d73ba4de899c,

title = "Improvement of negative bias temperature illumination stability of amorphous IGZO thin-film transistors by water vapor-assisted high-pressure oxygen annealing",

abstract = "The effect of high-pressure annealing on the performance and negative bias temperature illumination stress (NBTIS)-induced instability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated. IGZO TFTs that were annealed in a H2O vapor-assisted high-pressure O2 atmosphere exhibited significantly improved field-effect mobility and stability against NBTIS compared with those annealed in only high-pressure O2 or air. Annealing under high-pressure O2 in the presence of H 2O vapor effectively reduces oxygen-related defects, which act as subgap states within the bandgap. This phenomenon affects band alignments, including the bandgap and conduction band offset [Δ(EC-E F)] of IGZO semiconductors, and is the basis for the improved performance and stability of the TFTs.",

author = "Ahn, {Byung Du} and Kim, {Hyun Suk} and Yun, {Dong Jin} and Park, {Jin Seong} and Kim, {Hyun Jae}",

year = "2014",

doi = "10.1149/2.019405jss",

language = "English",

volume = "3",

pages = "Q95--Q98",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society Inc.",

number = "5",

}

TY - JOUR

T1 - Improvement of negative bias temperature illumination stability of amorphous IGZO thin-film transistors by water vapor-assisted high-pressure oxygen annealing

AU - Ahn, Byung Du

AU - Kim, Hyun Suk

AU - Yun, Dong Jin

AU - Park, Jin Seong

AU - Kim, Hyun Jae

PY - 2014

Y1 - 2014

N2 - The effect of high-pressure annealing on the performance and negative bias temperature illumination stress (NBTIS)-induced instability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated. IGZO TFTs that were annealed in a H2O vapor-assisted high-pressure O2 atmosphere exhibited significantly improved field-effect mobility and stability against NBTIS compared with those annealed in only high-pressure O2 or air. Annealing under high-pressure O2 in the presence of H 2O vapor effectively reduces oxygen-related defects, which act as subgap states within the bandgap. This phenomenon affects band alignments, including the bandgap and conduction band offset [Δ(EC-E F)] of IGZO semiconductors, and is the basis for the improved performance and stability of the TFTs.

AB - The effect of high-pressure annealing on the performance and negative bias temperature illumination stress (NBTIS)-induced instability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated. IGZO TFTs that were annealed in a H2O vapor-assisted high-pressure O2 atmosphere exhibited significantly improved field-effect mobility and stability against NBTIS compared with those annealed in only high-pressure O2 or air. Annealing under high-pressure O2 in the presence of H 2O vapor effectively reduces oxygen-related defects, which act as subgap states within the bandgap. This phenomenon affects band alignments, including the bandgap and conduction band offset [Δ(EC-E F)] of IGZO semiconductors, and is the basis for the improved performance and stability of the TFTs.

UR - http://www.scopus.com/inward/record.url?scp=84904744735&partnerID=8YFLogxK

U2 - 10.1149/2.019405jss

DO - 10.1149/2.019405jss

M3 - Article

AN - SCOPUS:84904744735

SN - 2162-8769

VL - 3

SP - Q95-Q98

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 5

ER -

Improvement of negative bias temperature illumination stability of amorphous IGZO thin-film transistors by water vapor-assisted high-pressure oxygen annealing

Abstract

Access to Document

Other files and links

Fingerprint

Cite this