Improvement of negative bias temperature illumination stability of amorphous IGZO thin-film transistors by water vapor-assisted high-pressure oxygen annealing

Byung Du Ahn; Hyun Suk Kim; Dong Jin Yun; Jin Seong Park; Hyun Jae Kim

doi:10.1149/2.019405jss

Improvement of negative bias temperature illumination stability of amorphous IGZO thin-film transistors by water vapor-assisted high-pressure oxygen annealing

Byung Du Ahn
, Hyun Suk Kim
, Dong Jin Yun
, Jin Seong Park
, Hyun Jae Kim

Department of Energy and Materials Engineering

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The effect of high-pressure annealing on the performance and negative bias temperature illumination stress (NBTIS)-induced instability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated. IGZO TFTs that were annealed in a H₂O vapor-assisted high-pressure O₂ atmosphere exhibited significantly improved field-effect mobility and stability against NBTIS compared with those annealed in only high-pressure O₂ or air. Annealing under high-pressure O₂ in the presence of H ₂O vapor effectively reduces oxygen-related defects, which act as subgap states within the bandgap. This phenomenon affects band alignments, including the bandgap and conduction band offset [Δ(E_C-E _F)] of IGZO semiconductors, and is the basis for the improved performance and stability of the TFTs.

Original language	English
Pages (from-to)	Q95-Q98
Journal	ECS Journal of Solid State Science and Technology
Volume	3
Issue number	5
DOIs	https://doi.org/10.1149/2.019405jss
State	Published - 2014

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title = "Improvement of negative bias temperature illumination stability of amorphous IGZO thin-film transistors by water vapor-assisted high-pressure oxygen annealing",

abstract = "The effect of high-pressure annealing on the performance and negative bias temperature illumination stress (NBTIS)-induced instability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated. IGZO TFTs that were annealed in a H2O vapor-assisted high-pressure O2 atmosphere exhibited significantly improved field-effect mobility and stability against NBTIS compared with those annealed in only high-pressure O2 or air. Annealing under high-pressure O2 in the presence of H 2O vapor effectively reduces oxygen-related defects, which act as subgap states within the bandgap. This phenomenon affects band alignments, including the bandgap and conduction band offset [Δ(EC-E F)] of IGZO semiconductors, and is the basis for the improved performance and stability of the TFTs.",

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doi = "10.1149/2.019405jss",

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T1 - Improvement of negative bias temperature illumination stability of amorphous IGZO thin-film transistors by water vapor-assisted high-pressure oxygen annealing

AU - Ahn, Byung Du

AU - Kim, Hyun Suk

AU - Yun, Dong Jin

AU - Park, Jin Seong

AU - Kim, Hyun Jae

PY - 2014

Y1 - 2014

N2 - The effect of high-pressure annealing on the performance and negative bias temperature illumination stress (NBTIS)-induced instability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated. IGZO TFTs that were annealed in a H2O vapor-assisted high-pressure O2 atmosphere exhibited significantly improved field-effect mobility and stability against NBTIS compared with those annealed in only high-pressure O2 or air. Annealing under high-pressure O2 in the presence of H 2O vapor effectively reduces oxygen-related defects, which act as subgap states within the bandgap. This phenomenon affects band alignments, including the bandgap and conduction band offset [Δ(EC-E F)] of IGZO semiconductors, and is the basis for the improved performance and stability of the TFTs.

AB - The effect of high-pressure annealing on the performance and negative bias temperature illumination stress (NBTIS)-induced instability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated. IGZO TFTs that were annealed in a H2O vapor-assisted high-pressure O2 atmosphere exhibited significantly improved field-effect mobility and stability against NBTIS compared with those annealed in only high-pressure O2 or air. Annealing under high-pressure O2 in the presence of H 2O vapor effectively reduces oxygen-related defects, which act as subgap states within the bandgap. This phenomenon affects band alignments, including the bandgap and conduction band offset [Δ(EC-E F)] of IGZO semiconductors, and is the basis for the improved performance and stability of the TFTs.

UR - https://www.scopus.com/pages/publications/84904744735

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DO - 10.1149/2.019405jss

M3 - Article

AN - SCOPUS:84904744735

SN - 2162-8769

VL - 3

SP - Q95-Q98

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 5

ER -

Improvement of negative bias temperature illumination stability of amorphous IGZO thin-film transistors by water vapor-assisted high-pressure oxygen annealing

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