Abstract
A self-powered ITO/ZnO/InP heterojunction photodetector has been demonstrated with a 10-nm ZnO interfacial layer deposited by atomic layer deposition as a hole-blocking layer. The presence of a valence band offset between InP and ZnO enhances the photocurrent.The valence band offset between InP and ZnO creates a sufficient barrier for hole movement. Low surface recombination under 520-nm laser irradiation produced maximum photoresponsivity of 44.2 mAW−1 with an illumination power of 1 µW at zero bias. The ZnO-passivated self-powered photodetector shows fast response and improved photo-detecting properties.Furthermore, the highly sensitive photodetectors are demonstrated to record the heart pulse wave by measuring relative changes in blood volume of the finger vessels.
Original language | English |
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Pages (from-to) | 1800-1806 |
Number of pages | 7 |
Journal | Journal of Electronic Materials |
Volume | 50 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2021 |
Keywords
- ALD ZnO
- InP
- interfacial passivation
- photodetectors
- Schottky junction