Improvement of Photoresponse Properties of Self-Powered ITO/InP Schottky Junction Photodetector by Interfacial ZnO Passivation

Hassan Algadi, Chandreswar Mahata, Sungjun Kim, Goutam Kumar Dalapati

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

A self-powered ITO/ZnO/InP heterojunction photodetector has been demonstrated with a 10-nm ZnO interfacial layer deposited by atomic layer deposition as a hole-blocking layer. The presence of a valence band offset between InP and ZnO enhances the photocurrent.The valence band offset between InP and ZnO creates a sufficient barrier for hole movement. Low surface recombination under 520-nm laser irradiation produced maximum photoresponsivity of 44.2 mAW−1 with an illumination power of 1 µW at zero bias. The ZnO-passivated self-powered photodetector shows fast response and improved photo-detecting properties.Furthermore, the highly sensitive photodetectors are demonstrated to record the heart pulse wave by measuring relative changes in blood volume of the finger vessels.

Original languageEnglish
Pages (from-to)1800-1806
Number of pages7
JournalJournal of Electronic Materials
Volume50
Issue number4
DOIs
StatePublished - Apr 2021

Keywords

  • ALD ZnO
  • InP
  • interfacial passivation
  • photodetectors
  • Schottky junction

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