Improvement of the surface stability of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on p-Cd0.96Zn0.04Te substrates by photochemical passivation

H. C. Jeon; T. W. Kang; T. W. Kim

doi:10.1023/A:1006741406222

Improvement of the surface stability of indium-doped Hg_0.8Cd_0.2Te epitaxial layers grown on p-Cd_0.96Zn_0.04Te substrates by photochemical passivation

H. C. Jeon, T. W. Kang, T. W. Kim

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Article › peer-review

Abstract

Photochemical passivation was used to improve the surface stability of indium-doped Hg_0.8Cd_0.2Te epitaxial layers grown on p-Cd_0.96Zn_0.04 Te substrates. The metal-insulator semiconductor behavior for Al/ZnS/passivated n-Hg_0.8Cd_0.2Te/p-Cd_0.96Zn_0.04 Te diodes was investigated, by performimg capacitance voltage(C-V) measurements at room temperature. Temperature of the In effusion cell was used to control the In-doping concentration. Magnitudes of fast state density and the fixed charge density in the Al/ZnS/photochemically passivated Hg_0.8Cd_0.2Te epilayer/Cd_0.96Zn_0.04 Te diode were smaller than those in the Al/ZnS/chemically passivated Hg_0.8Cd_0.2Te epilayer/Cd_0.96Zn_0.04Te diode.

Original language	English
Pages (from-to)	249-251
Number of pages	3
Journal	Journal of Materials Science Letters
Volume	20
Issue number	3
DOIs	https://doi.org/10.1023/A:1006741406222
State	Published - 1 Feb 2001

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title = "Improvement of the surface stability of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on p-Cd0.96Zn0.04Te substrates by photochemical passivation",

abstract = "Photochemical passivation was used to improve the surface stability of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on p-Cd0.96Zn0.04 Te substrates. The metal-insulator semiconductor behavior for Al/ZnS/passivated n-Hg0.8Cd0.2Te/p-Cd0.96Zn0.04 Te diodes was investigated, by performimg capacitance voltage(C-V) measurements at room temperature. Temperature of the In effusion cell was used to control the In-doping concentration. Magnitudes of fast state density and the fixed charge density in the Al/ZnS/photochemically passivated Hg0.8Cd0.2Te epilayer/Cd0.96Zn0.04 Te diode were smaller than those in the Al/ZnS/chemically passivated Hg0.8Cd0.2Te epilayer/Cd0.96Zn0.04Te diode.",

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AU - Jeon, H. C.

AU - Kang, T. W.

AU - Kim, T. W.

PY - 2001/2/1

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N2 - Photochemical passivation was used to improve the surface stability of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on p-Cd0.96Zn0.04 Te substrates. The metal-insulator semiconductor behavior for Al/ZnS/passivated n-Hg0.8Cd0.2Te/p-Cd0.96Zn0.04 Te diodes was investigated, by performimg capacitance voltage(C-V) measurements at room temperature. Temperature of the In effusion cell was used to control the In-doping concentration. Magnitudes of fast state density and the fixed charge density in the Al/ZnS/photochemically passivated Hg0.8Cd0.2Te epilayer/Cd0.96Zn0.04 Te diode were smaller than those in the Al/ZnS/chemically passivated Hg0.8Cd0.2Te epilayer/Cd0.96Zn0.04Te diode.

AB - Photochemical passivation was used to improve the surface stability of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on p-Cd0.96Zn0.04 Te substrates. The metal-insulator semiconductor behavior for Al/ZnS/passivated n-Hg0.8Cd0.2Te/p-Cd0.96Zn0.04 Te diodes was investigated, by performimg capacitance voltage(C-V) measurements at room temperature. Temperature of the In effusion cell was used to control the In-doping concentration. Magnitudes of fast state density and the fixed charge density in the Al/ZnS/photochemically passivated Hg0.8Cd0.2Te epilayer/Cd0.96Zn0.04 Te diode were smaller than those in the Al/ZnS/chemically passivated Hg0.8Cd0.2Te epilayer/Cd0.96Zn0.04Te diode.

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Improvement of the surface stability of indium-doped Hg_0.8Cd_0.2Te epitaxial layers grown on p-Cd_0.96Zn_0.04Te substrates by photochemical passivation

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