Improving the composition uniformity of Au-catalyzed InGaAs nanowires on silicon

Jae Cheol Shin, Do Yang Kim, Ari Lee, Hyo Jin Kim, Jae Hun Kim, Won Jun Choi, Hyun Seok Kim, Kyoung Jin Choi

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Spatial distribution of indium (In) atoms in ternary InxGa 1-xAs nanowires (NWs) was investigated by the energy-dispersive X-ray spectroscopy, which were grown on Si (111) by metal-organic chemical vapor deposition. The NWs have a tapered morphology with thicker diameter and higher In composition in the bottom of NWs. However, decreasing growth temperature and V/III ratio resulted in straight NWs with constant In composition throughout the NWs. This was attributed to enhanced deposition on the sidewall of the NW with higher In composition through the vapor-solid mode, leading to a core-shell structure consisting of low and high In-content layers.

Original languageEnglish
Pages (from-to)15-18
Number of pages4
JournalJournal of Crystal Growth
Volume372
Issue number1
DOIs
StatePublished - 2013

Keywords

  • A1. Nanostructures
  • A3. Metalorganic vapor phase epitaxy
  • B1. Nanomaterials
  • B2. Semiconducting III-V materials

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