Improving the electrical properties of zinc tin oxide thin film transistors using atmospheric plasma treatment

Sang Jun Oh; Chul Jong Han; Ji Wan Kim; Yong Hoon Kim; Sung Kyu Park; Jeong In Han; Jung Won Kang; Min Suk Oh

doi:10.1149/1.3597660

Improving the electrical properties of zinc tin oxide thin film transistors using atmospheric plasma treatment

Sang Jun Oh, Chul Jong Han, Ji Wan Kim, Yong Hoon Kim, Sung Kyu Park, Jeong In Han, Jung Won Kang, Min Suk Oh

Department of Chemical and Biochemical Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report on the effect of atmospheric plasma treatment on zinc tin oxide (ZTO) thin-film transistors (TFTs). To improve the properties of ZTO-TFTs, the back-channel surfaces of ZTO were treated by the atmospheric Ar plasma. The untreated ZTO-TFTs showed the average field effect mobility (_FE) of ∼6.79 cm²/Vs and subthreshold swing (S.S.) of ∼0.95 V/decade. The plasma-treated ZTO-TFTs showed the higher average _FE of ∼8.19 cm²/Vs than that of untreated devices and S.S. of ∼0.93. By a simple non-vacuum plasma treatment, we could drastically improve the electrical characteristics and uniformity of ZTO-TFTs.

Original language	English
Pages (from-to)	H354-H357
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	9
DOIs	https://doi.org/10.1149/1.3597660
State	Published - 2011

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title = "Improving the electrical properties of zinc tin oxide thin film transistors using atmospheric plasma treatment",

abstract = "We report on the effect of atmospheric plasma treatment on zinc tin oxide (ZTO) thin-film transistors (TFTs). To improve the properties of ZTO-TFTs, the back-channel surfaces of ZTO were treated by the atmospheric Ar plasma. The untreated ZTO-TFTs showed the average field effect mobility (FE) of ∼6.79 cm2/Vs and subthreshold swing (S.S.) of ∼0.95 V/decade. The plasma-treated ZTO-TFTs showed the higher average FE of ∼8.19 cm2/Vs than that of untreated devices and S.S. of ∼0.93. By a simple non-vacuum plasma treatment, we could drastically improve the electrical characteristics and uniformity of ZTO-TFTs.",

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T1 - Improving the electrical properties of zinc tin oxide thin film transistors using atmospheric plasma treatment

AU - Jun Oh, Sang

AU - Jong Han, Chul

AU - Kim, Ji Wan

AU - Kim, Yong Hoon

AU - Kyu Park, Sung

AU - Han, Jeong In

AU - Won Kang, Jung

AU - Suk Oh, Min

PY - 2011

Y1 - 2011

N2 - We report on the effect of atmospheric plasma treatment on zinc tin oxide (ZTO) thin-film transistors (TFTs). To improve the properties of ZTO-TFTs, the back-channel surfaces of ZTO were treated by the atmospheric Ar plasma. The untreated ZTO-TFTs showed the average field effect mobility (FE) of ∼6.79 cm2/Vs and subthreshold swing (S.S.) of ∼0.95 V/decade. The plasma-treated ZTO-TFTs showed the higher average FE of ∼8.19 cm2/Vs than that of untreated devices and S.S. of ∼0.93. By a simple non-vacuum plasma treatment, we could drastically improve the electrical characteristics and uniformity of ZTO-TFTs.

AB - We report on the effect of atmospheric plasma treatment on zinc tin oxide (ZTO) thin-film transistors (TFTs). To improve the properties of ZTO-TFTs, the back-channel surfaces of ZTO were treated by the atmospheric Ar plasma. The untreated ZTO-TFTs showed the average field effect mobility (FE) of ∼6.79 cm2/Vs and subthreshold swing (S.S.) of ∼0.95 V/decade. The plasma-treated ZTO-TFTs showed the higher average FE of ∼8.19 cm2/Vs than that of untreated devices and S.S. of ∼0.93. By a simple non-vacuum plasma treatment, we could drastically improve the electrical characteristics and uniformity of ZTO-TFTs.

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Improving the electrical properties of zinc tin oxide thin film transistors using atmospheric plasma treatment

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