Improving the electrical properties of zinc tin oxide thin film transistors using atmospheric plasma treatment

Sang Jun Oh; Chul Jong Han; Ji Wan Kim; Yong Hoon Kim; Sung Kyu Park; Jeong In Han; Jung Won Kang; Min Suk Oh

doi:10.1149/1.3597660

Improving the electrical properties of zinc tin oxide thin film transistors using atmospheric plasma treatment

Sang Jun Oh
, Chul Jong Han
, Ji Wan Kim
, Yong Hoon Kim
, Sung Kyu Park
, Jeong In Han
, Jung Won Kang
, Min Suk Oh

Department of Chemical and Biochemical Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report on the effect of atmospheric plasma treatment on zinc tin oxide (ZTO) thin-film transistors (TFTs). To improve the properties of ZTO-TFTs, the back-channel surfaces of ZTO were treated by the atmospheric Ar plasma. The untreated ZTO-TFTs showed the average field effect mobility (_FE) of ∼6.79 cm²/Vs and subthreshold swing (S.S.) of ∼0.95 V/decade. The plasma-treated ZTO-TFTs showed the higher average _FE of ∼8.19 cm²/Vs than that of untreated devices and S.S. of ∼0.93. By a simple non-vacuum plasma treatment, we could drastically improve the electrical characteristics and uniformity of ZTO-TFTs.

Original language	English
Pages (from-to)	H354-H357
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	9
DOIs	https://doi.org/10.1149/1.3597660
State	Published - 2011

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title = "Improving the electrical properties of zinc tin oxide thin film transistors using atmospheric plasma treatment",

abstract = "We report on the effect of atmospheric plasma treatment on zinc tin oxide (ZTO) thin-film transistors (TFTs). To improve the properties of ZTO-TFTs, the back-channel surfaces of ZTO were treated by the atmospheric Ar plasma. The untreated ZTO-TFTs showed the average field effect mobility (FE) of ∼6.79 cm2/Vs and subthreshold swing (S.S.) of ∼0.95 V/decade. The plasma-treated ZTO-TFTs showed the higher average FE of ∼8.19 cm2/Vs than that of untreated devices and S.S. of ∼0.93. By a simple non-vacuum plasma treatment, we could drastically improve the electrical characteristics and uniformity of ZTO-TFTs.",

author = "\{Jun Oh\}, Sang and \{Jong Han\}, Chul and Kim, \{Ji Wan\} and Kim, \{Yong Hoon\} and \{Kyu Park\}, Sung and Han, \{Jeong In\} and \{Won Kang\}, Jung and \{Suk Oh\}, Min",

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doi = "10.1149/1.3597660",

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T1 - Improving the electrical properties of zinc tin oxide thin film transistors using atmospheric plasma treatment

AU - Jun Oh, Sang

AU - Jong Han, Chul

AU - Kim, Ji Wan

AU - Kim, Yong Hoon

AU - Kyu Park, Sung

AU - Han, Jeong In

AU - Won Kang, Jung

AU - Suk Oh, Min

PY - 2011

Y1 - 2011

N2 - We report on the effect of atmospheric plasma treatment on zinc tin oxide (ZTO) thin-film transistors (TFTs). To improve the properties of ZTO-TFTs, the back-channel surfaces of ZTO were treated by the atmospheric Ar plasma. The untreated ZTO-TFTs showed the average field effect mobility (FE) of ∼6.79 cm2/Vs and subthreshold swing (S.S.) of ∼0.95 V/decade. The plasma-treated ZTO-TFTs showed the higher average FE of ∼8.19 cm2/Vs than that of untreated devices and S.S. of ∼0.93. By a simple non-vacuum plasma treatment, we could drastically improve the electrical characteristics and uniformity of ZTO-TFTs.

AB - We report on the effect of atmospheric plasma treatment on zinc tin oxide (ZTO) thin-film transistors (TFTs). To improve the properties of ZTO-TFTs, the back-channel surfaces of ZTO were treated by the atmospheric Ar plasma. The untreated ZTO-TFTs showed the average field effect mobility (FE) of ∼6.79 cm2/Vs and subthreshold swing (S.S.) of ∼0.95 V/decade. The plasma-treated ZTO-TFTs showed the higher average FE of ∼8.19 cm2/Vs than that of untreated devices and S.S. of ∼0.93. By a simple non-vacuum plasma treatment, we could drastically improve the electrical characteristics and uniformity of ZTO-TFTs.

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U2 - 10.1149/1.3597660

DO - 10.1149/1.3597660

M3 - Article

AN - SCOPUS:79960235292

SN - 1099-0062

VL - 14

SP - H354-H357

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 9

ER -

Improving the electrical properties of zinc tin oxide thin film transistors using atmospheric plasma treatment

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