In-O-N thin-film transistors with superior stability

Hvoung Do Kim, Hyun Suk Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, a relatively new type of semiconductor, indium oxynitride (InON) is studied by experimental evaluation of thin films and TFT devices. It is demonstrated that InON films has superior air stability compared to ZnON films.

Original languageEnglish
Title of host publication25th International Display Workshops, IDW 2018
PublisherInternational Display Workshops
Pages323-325
Number of pages3
ISBN (Electronic)9781510883918
StatePublished - 2018
Event25th International Display Workshops, IDW 2018 - Nagoya, Japan
Duration: 12 Dec 201814 Dec 2018

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Conference

Conference25th International Display Workshops, IDW 2018
Country/TerritoryJapan
CityNagoya
Period12/12/1814/12/18

Keywords

  • Air stability
  • Negative bias illumination stress
  • Oxnitride
  • Thin-film transistor

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