Abstract
In this work, a relatively new type of semiconductor, indium oxynitride (InON) is studied by experimental evaluation of thin films and TFT devices. It is demonstrated that InON films has superior air stability compared to ZnON films.
| Original language | English |
|---|---|
| Title of host publication | 25th International Display Workshops, IDW 2018 |
| Publisher | International Display Workshops |
| Pages | 323-325 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781510883918 |
| State | Published - 2018 |
| Event | 25th International Display Workshops, IDW 2018 - Nagoya, Japan Duration: 12 Dec 2018 → 14 Dec 2018 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 1 |
| ISSN (Print) | 1883-2490 |
Conference
| Conference | 25th International Display Workshops, IDW 2018 |
|---|---|
| Country/Territory | Japan |
| City | Nagoya |
| Period | 12/12/18 → 14/12/18 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
-
SDG 3 Good Health and Well-being
Keywords
- Air stability
- Negative bias illumination stress
- Oxnitride
- Thin-film transistor
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