InAs yP 1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers

Jeremy Kirch; Toby Garrod; Sangho Kim; Joo H. Park; Jae C. Shin; L. J. Mawst; T. F. Kuech; X. Song; S. E. Babcock; Igor Vurgaftman; Jerry R. Meyer; Tung Sheng Kuan

doi:10.1016/j.jcrysgro.2009.12.057

InAs _yP _1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers

Jeremy Kirch
, Toby Garrod
, Sangho Kim
, Joo H. Park
, Jae C. Shin
, L. J. Mawst
, T. F. Kuech
, X. Song
, S. E. Babcock
, Igor Vurgaftman
, Jerry R. Meyer
, Tung Sheng Kuan

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

The defect-trapping effectiveness of an InAsP metamorphic buffer layer (MBL) design was investigated by studying the light-emission characteristics of InAs quantum wells grown on the MBL, along with structural characterization through SIMS and TEM measurements. Using a fixed recipe for the MBL, several separate confinement heterostructures (SCHs) were studied using 8-band k.p simulations, HRXRD, SEM, optical microscope and variable-temperature photoluminescence. Room temperature PL was observed at wavelengths near 3 μm, although the PL intensity drops significantly for samples with wavelengths longer than 2.85 μm. Laser operation was achieved at 77 K at a wavelength of 2.45 μm and threshold as low as 290 A/cm ².

Original language	English
Pages (from-to)	1165-1169
Number of pages	5
Journal	Journal of Crystal Growth
Volume	312
Issue number	8
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.12.057
State	Published - 1 Apr 2010

Keywords

A3. Organometallic vapor phase epitaxy
A3. Quantum wells
B1. Antimonides
B1. Phosphides
B3. Laser diodes

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10.1016/j.jcrysgro.2009.12.057

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title = "InAs yP 1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers",

abstract = "The defect-trapping effectiveness of an InAsP metamorphic buffer layer (MBL) design was investigated by studying the light-emission characteristics of InAs quantum wells grown on the MBL, along with structural characterization through SIMS and TEM measurements. Using a fixed recipe for the MBL, several separate confinement heterostructures (SCHs) were studied using 8-band k.p simulations, HRXRD, SEM, optical microscope and variable-temperature photoluminescence. Room temperature PL was observed at wavelengths near 3 μm, although the PL intensity drops significantly for samples with wavelengths longer than 2.85 μm. Laser operation was achieved at 77 K at a wavelength of 2.45 μm and threshold as low as 290 A/cm 2.",

keywords = "A3. Organometallic vapor phase epitaxy, A3. Quantum wells, B1. Antimonides, B1. Phosphides, B3. Laser diodes",

author = "Jeremy Kirch and Toby Garrod and Sangho Kim and Park, \{Joo H.\} and Shin, \{Jae C.\} and Mawst, \{L. J.\} and Kuech, \{T. F.\} and X. Song and Babcock, \{S. E.\} and Igor Vurgaftman and Meyer, \{Jerry R.\} and Kuan, \{Tung Sheng\}",

year = "2010",

month = apr,

day = "1",

doi = "10.1016/j.jcrysgro.2009.12.057",

language = "English",

volume = "312",

pages = "1165--1169",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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T1 - InAs yP 1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers

AU - Kirch, Jeremy

AU - Garrod, Toby

AU - Kim, Sangho

AU - Park, Joo H.

AU - Shin, Jae C.

AU - Mawst, L. J.

AU - Kuech, T. F.

AU - Song, X.

AU - Babcock, S. E.

AU - Vurgaftman, Igor

AU - Meyer, Jerry R.

AU - Kuan, Tung Sheng

PY - 2010/4/1

Y1 - 2010/4/1

N2 - The defect-trapping effectiveness of an InAsP metamorphic buffer layer (MBL) design was investigated by studying the light-emission characteristics of InAs quantum wells grown on the MBL, along with structural characterization through SIMS and TEM measurements. Using a fixed recipe for the MBL, several separate confinement heterostructures (SCHs) were studied using 8-band k.p simulations, HRXRD, SEM, optical microscope and variable-temperature photoluminescence. Room temperature PL was observed at wavelengths near 3 μm, although the PL intensity drops significantly for samples with wavelengths longer than 2.85 μm. Laser operation was achieved at 77 K at a wavelength of 2.45 μm and threshold as low as 290 A/cm 2.

AB - The defect-trapping effectiveness of an InAsP metamorphic buffer layer (MBL) design was investigated by studying the light-emission characteristics of InAs quantum wells grown on the MBL, along with structural characterization through SIMS and TEM measurements. Using a fixed recipe for the MBL, several separate confinement heterostructures (SCHs) were studied using 8-band k.p simulations, HRXRD, SEM, optical microscope and variable-temperature photoluminescence. Room temperature PL was observed at wavelengths near 3 μm, although the PL intensity drops significantly for samples with wavelengths longer than 2.85 μm. Laser operation was achieved at 77 K at a wavelength of 2.45 μm and threshold as low as 290 A/cm 2.

KW - A3. Organometallic vapor phase epitaxy

KW - A3. Quantum wells

KW - B1. Antimonides

KW - B1. Phosphides

KW - B3. Laser diodes

UR - https://www.scopus.com/pages/publications/77949874568

U2 - 10.1016/j.jcrysgro.2009.12.057

DO - 10.1016/j.jcrysgro.2009.12.057

M3 - Article

AN - SCOPUS:77949874568

SN - 0022-0248

VL - 312

SP - 1165

EP - 1169

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 8

ER -

InAs _yP _1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers

Abstract

Keywords

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