InAsyP1-y metamorphic buffer layers (MBLs) on InP substrates for Mid-IR diode lasers

J. Kirch; T. Garrod; S. Kim; J. H. Park; J. C. Shin; L. J. Mawst; T. F. Kuech; X. Song; S. E. Babcock; I. Vurgaftman; J. R. Meyer

doi:10.1364/cleo.2009.ctugg6

InAs_yP_1-y metamorphic buffer layers (MBLs) on InP substrates for Mid-IR diode lasers

J. Kirch, T. Garrod, S. Kim, J. H. Park, J. C. Shin, L. J. Mawst, T. F. Kuech, X. Song, S. E. Babcock, I. Vurgaftman, J. R. Meyer

Department of Electronics & Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

InAs QWs grown with InAsyP_1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near l~2.5mm @77K.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2009
Publisher	Optical Society of America (OSA)
ISBN (Print)	9781557528698
DOIs	https://doi.org/10.1364/cleo.2009.ctugg6
State	Published - 2009
Event	Conference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States Duration: 31 May 2009 → 5 Jun 2009

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	Conference on Lasers and Electro-Optics, CLEO 2009
Country/Territory	United States
City	Baltimore, MD
Period	31/05/09 → 5/06/09

Access to Document

10.1364/cleo.2009.ctugg6

Cite this

Kirch, J., Garrod, T., Kim, S., Park, J. H., Shin, J. C., Mawst, L. J., Kuech, T. F., Song, X., Babcock, S. E., Vurgaftman, I., & Meyer, J. R. (2009). InAs_yP_1-y metamorphic buffer layers (MBLs) on InP substrates for Mid-IR diode lasers. In Conference on Lasers and Electro-Optics, CLEO 2009 (Optics InfoBase Conference Papers). Optical Society of America (OSA). https://doi.org/10.1364/cleo.2009.ctugg6

@inproceedings{a84ca28717544cf5aa1cbf35b7720a39,

title = "InAsyP1-y metamorphic buffer layers (MBLs) on InP substrates for Mid-IR diode lasers",

abstract = "InAs QWs grown with InAsyP1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near l~2.5mm @77K.",

author = "J. Kirch and T. Garrod and S. Kim and Park, {J. H.} and Shin, {J. C.} and Mawst, {L. J.} and Kuech, {T. F.} and X. Song and Babcock, {S. E.} and I. Vurgaftman and Meyer, {J. R.}",

year = "2009",

doi = "10.1364/cleo.2009.ctugg6",

language = "English",

isbn = "9781557528698",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America (OSA)",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2009",

note = "Conference on Lasers and Electro-Optics, CLEO 2009 ; Conference date: 31-05-2009 Through 05-06-2009",

}

Kirch, J, Garrod, T, Kim, S, Park, JH, Shin, JC, Mawst, LJ, Kuech, TF, Song, X, Babcock, SE, Vurgaftman, I & Meyer, JR 2009, InAs_yP_1-y metamorphic buffer layers (MBLs) on InP substrates for Mid-IR diode lasers. in Conference on Lasers and Electro-Optics, CLEO 2009. Optics InfoBase Conference Papers, Optical Society of America (OSA), Conference on Lasers and Electro-Optics, CLEO 2009, Baltimore, MD, United States, 31/05/09. https://doi.org/10.1364/cleo.2009.ctugg6

TY - GEN

T1 - InAsyP1-y metamorphic buffer layers (MBLs) on InP substrates for Mid-IR diode lasers

AU - Kirch, J.

AU - Garrod, T.

AU - Kim, S.

AU - Park, J. H.

AU - Shin, J. C.

AU - Mawst, L. J.

AU - Kuech, T. F.

AU - Song, X.

AU - Babcock, S. E.

AU - Vurgaftman, I.

AU - Meyer, J. R.

PY - 2009

Y1 - 2009

N2 - InAs QWs grown with InAsyP1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near l~2.5mm @77K.

AB - InAs QWs grown with InAsyP1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near l~2.5mm @77K.

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U2 - 10.1364/cleo.2009.ctugg6

DO - 10.1364/cleo.2009.ctugg6

M3 - Conference contribution

AN - SCOPUS:85087594932

SN - 9781557528698

T3 - Optics InfoBase Conference Papers

BT - Conference on Lasers and Electro-Optics, CLEO 2009

PB - Optical Society of America (OSA)

T2 - Conference on Lasers and Electro-Optics, CLEO 2009

Y2 - 31 May 2009 through 5 June 2009

ER -