InAsyP1-y Metamorphic Buffer Layers (MBLs) on InP substrates for Mid-IR diode lasers

J. Kirch; T. Garrod; S. Kim; J. H. Park; J. C. Shin; L. J. Mawst; T. F. Kuech; X. Song; S. E. Babcock; I. Vurgaftman; J. R. Meyer

InAs_yP_1-y Metamorphic Buffer Layers (MBLs) on InP substrates for Mid-IR diode lasers

J. Kirch
, T. Garrod
, S. Kim
, J. H. Park
, J. C. Shin
, L. J. Mawst
, T. F. Kuech
, X. Song
, S. E. Babcock
, I. Vurgaftman
, J. R. Meyer

Department of Electronics & Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

InAs QWs grown with InAs_yP_1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near λ∼2.5μm @77K.

Original language	English
Title of host publication	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
State	Published - 2009
Event	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 - Baltimore, MD, United States Duration: 2 Jun 2009 → 4 Jun 2009

Publication series

Name	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Conference

Conference	2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009
Country/Territory	United States
City	Baltimore, MD
Period	2/06/09 → 4/06/09

Cite this

Kirch, J., Garrod, T., Kim, S., Park, J. H., Shin, J. C., Mawst, L. J., Kuech, T. F., Song, X., Babcock, S. E., Vurgaftman, I., & Meyer, J. R. (2009). InAs_yP_1-y Metamorphic Buffer Layers (MBLs) on InP substrates for Mid-IR diode lasers. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 Article 5224543 (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

Kirch, J. ; Garrod, T. ; Kim, S. et al. / InAs_yP_1-y Metamorphic Buffer Layers (MBLs) on InP substrates for Mid-IR diode lasers. 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009. (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

@inproceedings{b858d3d770744fb196796adec74ffd17,

title = "InAsyP1-y Metamorphic Buffer Layers (MBLs) on InP substrates for Mid-IR diode lasers",

abstract = "InAs QWs grown with InAsyP1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near λ∼2.5μm @77K.",

author = "J. Kirch and T. Garrod and S. Kim and Park, \{J. H.\} and Shin, \{J. C.\} and Mawst, \{L. J.\} and Kuech, \{T. F.\} and X. Song and Babcock, \{S. E.\} and I. Vurgaftman and Meyer, \{J. R.\}",

year = "2009",

language = "English",

isbn = "9781557528698",

series = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009",

booktitle = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009",

note = "2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009 ; Conference date: 02-06-2009 Through 04-06-2009",

}

Kirch, J, Garrod, T, Kim, S, Park, JH, Shin, JC, Mawst, LJ, Kuech, TF, Song, X, Babcock, SE, Vurgaftman, I & Meyer, JR 2009, InAs_yP_1-y Metamorphic Buffer Layers (MBLs) on InP substrates for Mid-IR diode lasers. in 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009., 5224543, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, Baltimore, MD, United States, 2/06/09.

InAs_yP_1-y Metamorphic Buffer Layers (MBLs) on InP substrates for Mid-IR diode lasers. / Kirch, J.; Garrod, T.; Kim, S. et al.
2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009. 5224543 (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InAsyP1-y Metamorphic Buffer Layers (MBLs) on InP substrates for Mid-IR diode lasers

AU - Kirch, J.

AU - Garrod, T.

AU - Kim, S.

AU - Park, J. H.

AU - Shin, J. C.

AU - Mawst, L. J.

AU - Kuech, T. F.

AU - Song, X.

AU - Babcock, S. E.

AU - Vurgaftman, I.

AU - Meyer, J. R.

PY - 2009

Y1 - 2009

N2 - InAs QWs grown with InAsyP1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near λ∼2.5μm @77K.

AB - InAs QWs grown with InAsyP1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near λ∼2.5μm @77K.

UR - https://www.scopus.com/pages/publications/71049129918

M3 - Conference contribution

AN - SCOPUS:71049129918

SN - 9781557528698

T3 - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

BT - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

T2 - 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Y2 - 2 June 2009 through 4 June 2009

ER -

Kirch J, Garrod T, Kim S, Park JH, Shin JC, Mawst LJ et al. InAs_yP_1-y Metamorphic Buffer Layers (MBLs) on InP substrates for Mid-IR diode lasers. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009. 2009. 5224543. (2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009).

InAs_yP_1-y Metamorphic Buffer Layers (MBLs) on InP substrates for Mid-IR diode lasers

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