InAsyP1-y metamorphic buffer layers (MBLs) on InP substrates for Mid-IR diode lasers

J. Kirch; T. Garrod; S. Kim; J. H. Park; J. C. Shin; L. J. Mawst; T. F. Kuech; X. Song; S. E. Babcock; I. Vurgaftman; J. R. Meyer

doi:10.1364/cleo.2009.ctugg6

InAs_yP_1-y metamorphic buffer layers (MBLs) on InP substrates for Mid-IR diode lasers

J. Kirch
, T. Garrod
, S. Kim
, J. H. Park
, J. C. Shin
, L. J. Mawst
, T. F. Kuech
, X. Song
, S. E. Babcock
, I. Vurgaftman
, J. R. Meyer

Department of Electronics & Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

InAs QWs grown with InAsyP_1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near l~2.5mm @77K.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2009
Publisher	Optical Society of America (OSA)
ISBN (Print)	9781557528698
DOIs	https://doi.org/10.1364/cleo.2009.ctugg6
State	Published - 2009
Event	Conference on Lasers and Electro-Optics, CLEO 2009 - Baltimore, MD, United States Duration: 31 May 2009 → 5 Jun 2009

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	Conference on Lasers and Electro-Optics, CLEO 2009
Country/Territory	United States
City	Baltimore, MD
Period	31/05/09 → 5/06/09

Access to Document

10.1364/cleo.2009.ctugg6

Cite this

Kirch, J., Garrod, T., Kim, S., Park, J. H., Shin, J. C., Mawst, L. J., Kuech, T. F., Song, X., Babcock, S. E., Vurgaftman, I., & Meyer, J. R. (2009). InAs_yP_1-y metamorphic buffer layers (MBLs) on InP substrates for Mid-IR diode lasers. In Conference on Lasers and Electro-Optics, CLEO 2009 (Optics InfoBase Conference Papers). Optical Society of America (OSA). https://doi.org/10.1364/cleo.2009.ctugg6

@inproceedings{a84ca28717544cf5aa1cbf35b7720a39,

title = "InAsyP1-y metamorphic buffer layers (MBLs) on InP substrates for Mid-IR diode lasers",

abstract = "InAs QWs grown with InAsyP1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near l\textasciitilde{}2.5mm @77K.",

author = "J. Kirch and T. Garrod and S. Kim and Park, \{J. H.\} and Shin, \{J. C.\} and Mawst, \{L. J.\} and Kuech, \{T. F.\} and X. Song and Babcock, \{S. E.\} and I. Vurgaftman and Meyer, \{J. R.\}",

year = "2009",

doi = "10.1364/cleo.2009.ctugg6",

language = "English",

isbn = "9781557528698",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America (OSA)",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2009",

note = "Conference on Lasers and Electro-Optics, CLEO 2009 ; Conference date: 31-05-2009 Through 05-06-2009",

}

Kirch, J, Garrod, T, Kim, S, Park, JH, Shin, JC, Mawst, LJ, Kuech, TF, Song, X, Babcock, SE, Vurgaftman, I & Meyer, JR 2009, InAs_yP_1-y metamorphic buffer layers (MBLs) on InP substrates for Mid-IR diode lasers. in Conference on Lasers and Electro-Optics, CLEO 2009. Optics InfoBase Conference Papers, Optical Society of America (OSA), Conference on Lasers and Electro-Optics, CLEO 2009, Baltimore, MD, United States, 31/05/09. https://doi.org/10.1364/cleo.2009.ctugg6

TY - GEN

T1 - InAsyP1-y metamorphic buffer layers (MBLs) on InP substrates for Mid-IR diode lasers

AU - Kirch, J.

AU - Garrod, T.

AU - Kim, S.

AU - Park, J. H.

AU - Shin, J. C.

AU - Mawst, L. J.

AU - Kuech, T. F.

AU - Song, X.

AU - Babcock, S. E.

AU - Vurgaftman, I.

AU - Meyer, J. R.

PY - 2009

Y1 - 2009

N2 - InAs QWs grown with InAsyP1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near l~2.5mm @77K.

AB - InAs QWs grown with InAsyP1-y metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near l~2.5mm @77K.

UR - https://www.scopus.com/pages/publications/85087594932

U2 - 10.1364/cleo.2009.ctugg6

DO - 10.1364/cleo.2009.ctugg6

M3 - Conference contribution

AN - SCOPUS:85087594932

SN - 9781557528698

T3 - Optics InfoBase Conference Papers

BT - Conference on Lasers and Electro-Optics, CLEO 2009

PB - Optical Society of America (OSA)

T2 - Conference on Lasers and Electro-Optics, CLEO 2009

Y2 - 31 May 2009 through 5 June 2009

ER -