Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes

Sung Jin Jo; Chang Su Kim; Jong Bok Kim; Seung Yoon Ryu; Joo Hyon Noh; Hong Koo Baik; Youn Sang Kim; Se Jong Lee

doi:10.1063/1.2939261

Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes

Sung Jin Jo
, Chang Su Kim
, Jong Bok Kim
, Seung Yoon Ryu
, Joo Hyon Noh
, Hong Koo Baik
, Youn Sang Kim
, Se Jong Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The effects of tetrafluoromethane (CF₄) plasma treatment of indium-tin-oxide (ITO) anode on indium diffusion into a poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PSS) layer were studied. Auger electron spectroscopy (AES) depth profile showed that 0.2 at. % indium was present in the PEDOT:PSS layer when ITO was not plasma treated. The plasma treatment of ITO increased the indium concentration to ∼6 at. %. The increase in indium can be explained by an oxygen deficiency in the CF ₄ plasma treated ITO. The presence of indium in the PEDOT:PSS layer showed a correlation with performance degradation of polymer light-emitting diodes.

Original language	English
Article number	114502
Journal	Journal of Applied Physics
Volume	103
Issue number	11
DOIs	https://doi.org/10.1063/1.2939261
State	Published - 2008

Access to Document

10.1063/1.2939261

Cite this

@article{5e867ce1e9a44f42ac299f1352a86c4e,

title = "Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes",

abstract = "The effects of tetrafluoromethane (CF4) plasma treatment of indium-tin-oxide (ITO) anode on indium diffusion into a poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PSS) layer were studied. Auger electron spectroscopy (AES) depth profile showed that 0.2 at. \% indium was present in the PEDOT:PSS layer when ITO was not plasma treated. The plasma treatment of ITO increased the indium concentration to ∼6 at. \%. The increase in indium can be explained by an oxygen deficiency in the CF 4 plasma treated ITO. The presence of indium in the PEDOT:PSS layer showed a correlation with performance degradation of polymer light-emitting diodes.",

author = "Jo, \{Sung Jin\} and Kim, \{Chang Su\} and Kim, \{Jong Bok\} and Ryu, \{Seung Yoon\} and Noh, \{Joo Hyon\} and Baik, \{Hong Koo\} and Kim, \{Youn Sang\} and Lee, \{Se Jong\}",

year = "2008",

doi = "10.1063/1.2939261",

language = "English",

volume = "103",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes

AU - Jo, Sung Jin

AU - Kim, Chang Su

AU - Kim, Jong Bok

AU - Ryu, Seung Yoon

AU - Noh, Joo Hyon

AU - Baik, Hong Koo

AU - Kim, Youn Sang

AU - Lee, Se Jong

PY - 2008

Y1 - 2008

N2 - The effects of tetrafluoromethane (CF4) plasma treatment of indium-tin-oxide (ITO) anode on indium diffusion into a poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PSS) layer were studied. Auger electron spectroscopy (AES) depth profile showed that 0.2 at. % indium was present in the PEDOT:PSS layer when ITO was not plasma treated. The plasma treatment of ITO increased the indium concentration to ∼6 at. %. The increase in indium can be explained by an oxygen deficiency in the CF 4 plasma treated ITO. The presence of indium in the PEDOT:PSS layer showed a correlation with performance degradation of polymer light-emitting diodes.

AB - The effects of tetrafluoromethane (CF4) plasma treatment of indium-tin-oxide (ITO) anode on indium diffusion into a poly(3,4-ethylene dioxythiophene):poly(styrene sulphonate) (PEDOT:PSS) layer were studied. Auger electron spectroscopy (AES) depth profile showed that 0.2 at. % indium was present in the PEDOT:PSS layer when ITO was not plasma treated. The plasma treatment of ITO increased the indium concentration to ∼6 at. %. The increase in indium can be explained by an oxygen deficiency in the CF 4 plasma treated ITO. The presence of indium in the PEDOT:PSS layer showed a correlation with performance degradation of polymer light-emitting diodes.

UR - https://www.scopus.com/pages/publications/45149130917

U2 - 10.1063/1.2939261

DO - 10.1063/1.2939261

M3 - Article

AN - SCOPUS:45149130917

SN - 0021-8979

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 114502

ER -

Increase in indium diffusion by tetrafluoromethane plasma treatment and its effects on the device performance of polymer light-emitting diodes

Abstract

Access to Document

Other files and links

Fingerprint

Cite this