Indium oxide thin-film transistors fabricated by RF sputtering at room temperature

Joo Hyon Noh; Seung Yoon Ryu; Sung Jin Jo; Chang Su Kim; Sung Woo Sohn; Philip D. Rack; Dong Joo Kim; Hong Koo Baik

doi:10.1109/LED.2010.2046133

Indium oxide thin-film transistors fabricated by RF sputtering at room temperature

Joo Hyon Noh
, Seung Yoon Ryu
, Sung Jin Jo
, Chang Su Kim
, Sung Woo Sohn
, Philip D. Rack
, Dong Joo Kim
, Hong Koo Baik

Department of Physics

Research output: Contribution to journal › Article › peer-review

98 Scopus citations

Abstract

Thin-film transistors (TFTs) were fabricated using an indium oxide (In ₂O₃ thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 488 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In ₂O₃ TFTs had a field-effect mobility of 15.3 cm ²ċV^-1ċs^-1, a threshold voltage of 3.1 V, an onoff current ratio of 2.2 × 10⁸, a subthreshold gate voltage swing of 0.25 V̇ decade^-1, and, most importantly, a normally off characteristic. These results suggest that sputter-deposited In₂O₃ is a promising candidate for high-performance TFTs for transparent and flexible electronics.

Original language	English
Article number	5451159
Pages (from-to)	567-569
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	6
DOIs	https://doi.org/10.1109/LED.2010.2046133
State	Published - Jun 2010

Keywords

Indium oxide
Thin films
Thin-film transistors (TFTs)

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10.1109/LED.2010.2046133

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title = "Indium oxide thin-film transistors fabricated by RF sputtering at room temperature",

abstract = "Thin-film transistors (TFTs) were fabricated using an indium oxide (In 2O3 thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 488 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In 2O3 TFTs had a field-effect mobility of 15.3 cm 2ċV-1ċs-1, a threshold voltage of 3.1 V, an onoff current ratio of 2.2 × 108, a subthreshold gate voltage swing of 0.25 {\.V} decade-1, and, most importantly, a normally off characteristic. These results suggest that sputter-deposited In2O3 is a promising candidate for high-performance TFTs for transparent and flexible electronics.",

keywords = "Indium oxide, Thin films, Thin-film transistors (TFTs)",

author = "Noh, \{Joo Hyon\} and Ryu, \{Seung Yoon\} and Jo, \{Sung Jin\} and Kim, \{Chang Su\} and Sohn, \{Sung Woo\} and Rack, \{Philip D.\} and Kim, \{Dong Joo\} and Baik, \{Hong Koo\}",

year = "2010",

month = jun,

doi = "10.1109/LED.2010.2046133",

language = "English",

volume = "31",

pages = "567--569",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Noh, Joo Hyon

AU - Ryu, Seung Yoon

AU - Jo, Sung Jin

AU - Kim, Chang Su

AU - Sohn, Sung Woo

AU - Rack, Philip D.

AU - Kim, Dong Joo

AU - Baik, Hong Koo

PY - 2010/6

Y1 - 2010/6

N2 - Thin-film transistors (TFTs) were fabricated using an indium oxide (In 2O3 thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 488 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In 2O3 TFTs had a field-effect mobility of 15.3 cm 2ċV-1ċs-1, a threshold voltage of 3.1 V, an onoff current ratio of 2.2 × 108, a subthreshold gate voltage swing of 0.25 V̇ decade-1, and, most importantly, a normally off characteristic. These results suggest that sputter-deposited In2O3 is a promising candidate for high-performance TFTs for transparent and flexible electronics.

AB - Thin-film transistors (TFTs) were fabricated using an indium oxide (In 2O3 thin film as the n-channel active layer by RF sputtering at room temperature. The TFTs showed a thickness-dependent performance in the range of 488 nm, which is ascribed to the total carrier number in the active layer. Optimum device performance at 8-nm-thick In 2O3 TFTs had a field-effect mobility of 15.3 cm 2ċV-1ċs-1, a threshold voltage of 3.1 V, an onoff current ratio of 2.2 × 108, a subthreshold gate voltage swing of 0.25 V̇ decade-1, and, most importantly, a normally off characteristic. These results suggest that sputter-deposited In2O3 is a promising candidate for high-performance TFTs for transparent and flexible electronics.

KW - Indium oxide

KW - Thin films

KW - Thin-film transistors (TFTs)

UR - https://www.scopus.com/pages/publications/77953024683

U2 - 10.1109/LED.2010.2046133

DO - 10.1109/LED.2010.2046133

M3 - Article

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EP - 569

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JF - IEEE Electron Device Letters

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Indium oxide thin-film transistors fabricated by RF sputtering at room temperature

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Keywords

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