Indium tin oxide electrode with an ultrathin Al buffer layer for flexible organic light emitting diode

Boyeon Sim; Hyeonseok Hwang; Seungyoon Ryu; Hongkoo Baik; Myeongkyu Lee

doi:10.1143/JJAP.49.060205

Indium tin oxide electrode with an ultrathin Al buffer layer for flexible organic light emitting diode

Boyeon Sim
, Hyeonseok Hwang
, Seungyoon Ryu
, Hongkoo Baik
, Myeongkyu Lee

Department of Physics

Yonsei University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This paper reports that the mechanical and electrical stability of indium tin oxide (ITO) film deposited on flexible plastic substrate can be much enhanced with a thin Al buffer layer while maintaining a visible transmittance over 75%. The improved stability is attributed to the effective elastic mismatch between the film and the substrate reduced by a ductile interlayer. A polymer light emitting diode fabricated using an ITO/Al anode exhibited a luminance of 13,000 cd/m² with a current efficiency of 16 cd/A. Bending-induced degradation of the device performance was also alleviated when a mechanical buffer layer was inserted.

Original language	English
Pages (from-to)	602051-602053
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	49
Issue number	6 PART 1
DOIs	https://doi.org/10.1143/JJAP.49.060205
State	Published - Jun 2010

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10.1143/JJAP.49.060205

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title = "Indium tin oxide electrode with an ultrathin Al buffer layer for flexible organic light emitting diode",

abstract = "This paper reports that the mechanical and electrical stability of indium tin oxide (ITO) film deposited on flexible plastic substrate can be much enhanced with a thin Al buffer layer while maintaining a visible transmittance over 75\%. The improved stability is attributed to the effective elastic mismatch between the film and the substrate reduced by a ductile interlayer. A polymer light emitting diode fabricated using an ITO/Al anode exhibited a luminance of 13,000 cd/m2 with a current efficiency of 16 cd/A. Bending-induced degradation of the device performance was also alleviated when a mechanical buffer layer was inserted.",

author = "Boyeon Sim and Hyeonseok Hwang and Seungyoon Ryu and Hongkoo Baik and Myeongkyu Lee",

year = "2010",

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doi = "10.1143/JJAP.49.060205",

language = "English",

volume = "49",

pages = "602051--602053",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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Indium tin oxide electrode with an ultrathin Al buffer layer for flexible organic light emitting diode. / Sim, Boyeon; Hwang, Hyeonseok; Ryu, Seungyoon et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 49, No. 6 PART 1, 06.2010, p. 602051-602053.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Indium tin oxide electrode with an ultrathin Al buffer layer for flexible organic light emitting diode

AU - Sim, Boyeon

AU - Hwang, Hyeonseok

AU - Ryu, Seungyoon

AU - Baik, Hongkoo

AU - Lee, Myeongkyu

PY - 2010/6

Y1 - 2010/6

N2 - This paper reports that the mechanical and electrical stability of indium tin oxide (ITO) film deposited on flexible plastic substrate can be much enhanced with a thin Al buffer layer while maintaining a visible transmittance over 75%. The improved stability is attributed to the effective elastic mismatch between the film and the substrate reduced by a ductile interlayer. A polymer light emitting diode fabricated using an ITO/Al anode exhibited a luminance of 13,000 cd/m2 with a current efficiency of 16 cd/A. Bending-induced degradation of the device performance was also alleviated when a mechanical buffer layer was inserted.

AB - This paper reports that the mechanical and electrical stability of indium tin oxide (ITO) film deposited on flexible plastic substrate can be much enhanced with a thin Al buffer layer while maintaining a visible transmittance over 75%. The improved stability is attributed to the effective elastic mismatch between the film and the substrate reduced by a ductile interlayer. A polymer light emitting diode fabricated using an ITO/Al anode exhibited a luminance of 13,000 cd/m2 with a current efficiency of 16 cd/A. Bending-induced degradation of the device performance was also alleviated when a mechanical buffer layer was inserted.

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U2 - 10.1143/JJAP.49.060205

DO - 10.1143/JJAP.49.060205

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 6 PART 1

ER -

Indium tin oxide electrode with an ultrathin Al buffer layer for flexible organic light emitting diode

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