TY - JOUR
T1 - Influence of Al doping concentration on the opto-electronic chattels of SnS thin films readied by NSP
AU - Sebastian, S.
AU - Kulandaisamy, I.
AU - Arulanantham, A. M.S.
AU - Valanarasu, S.
AU - Kathalingam, A.
AU - Jesu Jebathew, A.
AU - Shkir, Mohd
AU - Karunakaran, M.
N1 - Publisher Copyright:
© 2019, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2019/4/1
Y1 - 2019/4/1
N2 - Herein, we limelight the key features of SnS thin films coated by spray pyrolysis process with different Al doping concentrations. The SnS thin films coated with different Al concentration (0, 2, 4, 6 at wt%) were characterized by various techniques. Structural parameters studied by XRD data revealed that all the prepared films were orthorhombic crystal structure with (111) as a preferential direction. Raman spectroscopy showed the presence of Ag, B1g, B2g, and B3g vibration modes at their corresponding wave numbers. Concentration dependent granular change of Al:SnS films were shown by AFM images. The presence of Sn, S and Al element without any other impurities was confirmed through EDAX picture. UV studies revealed the shrinkage of band gap from 1.97 to 1.72 eV on increasing the Al doping concentration from 0% to 4 at wt%. Room temperature PL showed a high intense red shift, as emission observed at 722 nm for 4% of Al doped SnS thin film. Hall measurements exhibited p-type conducting nature of undoped and Al doped SnS films. The films showed a lowest resistivity of 2.695×10−1 Ω cm for 4 at wt% Al doping concentration. 0.093% efficiency was obtained for the solar cell device fabricated by 4 at wt% of Al doped SnS thin film.
AB - Herein, we limelight the key features of SnS thin films coated by spray pyrolysis process with different Al doping concentrations. The SnS thin films coated with different Al concentration (0, 2, 4, 6 at wt%) were characterized by various techniques. Structural parameters studied by XRD data revealed that all the prepared films were orthorhombic crystal structure with (111) as a preferential direction. Raman spectroscopy showed the presence of Ag, B1g, B2g, and B3g vibration modes at their corresponding wave numbers. Concentration dependent granular change of Al:SnS films were shown by AFM images. The presence of Sn, S and Al element without any other impurities was confirmed through EDAX picture. UV studies revealed the shrinkage of band gap from 1.97 to 1.72 eV on increasing the Al doping concentration from 0% to 4 at wt%. Room temperature PL showed a high intense red shift, as emission observed at 722 nm for 4% of Al doped SnS thin film. Hall measurements exhibited p-type conducting nature of undoped and Al doped SnS films. The films showed a lowest resistivity of 2.695×10−1 Ω cm for 4 at wt% Al doping concentration. 0.093% efficiency was obtained for the solar cell device fabricated by 4 at wt% of Al doped SnS thin film.
KW - AFM image
KW - Al doped SnS films
KW - Hall measurements and solar cells
KW - Structural studies
UR - http://www.scopus.com/inward/record.url?scp=85063477533&partnerID=8YFLogxK
U2 - 10.1007/s11082-019-1812-1
DO - 10.1007/s11082-019-1812-1
M3 - Article
AN - SCOPUS:85063477533
SN - 0306-8919
VL - 51
JO - Optical and Quantum Electronics
JF - Optical and Quantum Electronics
IS - 4
M1 - 100
ER -