Influence of Cu vacancy on knit coir mat structured CuS as counter electrode for quantum dot sensitized solar cells

A. Dennyson Savariraj; Kodakkal Kannan Viswanathan; Kandasamy Prabakar

doi:10.1021/am504615x

Influence of Cu vacancy on knit coir mat structured CuS as counter electrode for quantum dot sensitized solar cells

A. Dennyson Savariraj
, Kodakkal Kannan Viswanathan
, Kandasamy Prabakar

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

86 Scopus citations

Abstract

Knit-coir-mat-like structured CuS thin films prepared by chemical bath deposition with different time duration were used as counter electrode in qunatum dot sensitized solar cells. The film deposited at 4 h exhibited better electrochemical and photovoltaic performance with J_SC, V_OC, and FF values of 14.584 mA cm^-2, 0.566 V, and 54.57% and efficiency of 4.53%. From the UV-vis absorption spectra, it is observed that CuS thin film exhibits free carrier intraband absorption in the longer wavelengh region. The enhanced performance of CuS counter electrodes is due to Cu vacancies with increased S composition, and the quasi-Fermi energy level in semiconductors with respect to electrolyte redox potential is one of the causes that affects the electrocatalytic activity of counter electrodes. (Chemical Equation Presented).

Original language	English
Pages (from-to)	19702-19709
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	6
Issue number	22
DOIs	https://doi.org/10.1021/am504615x
State	Published - 26 Nov 2014

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This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CuS counter electrodes
Impedance spectroscopy
Knit coir mat
Quantum dot solar cells

Access to Document

10.1021/am504615x

Cite this

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title = "Influence of Cu vacancy on knit coir mat structured CuS as counter electrode for quantum dot sensitized solar cells",

abstract = "Knit-coir-mat-like structured CuS thin films prepared by chemical bath deposition with different time duration were used as counter electrode in qunatum dot sensitized solar cells. The film deposited at 4 h exhibited better electrochemical and photovoltaic performance with JSC, VOC, and FF values of 14.584 mA cm-2, 0.566 V, and 54.57\% and efficiency of 4.53\%. From the UV-vis absorption spectra, it is observed that CuS thin film exhibits free carrier intraband absorption in the longer wavelengh region. The enhanced performance of CuS counter electrodes is due to Cu vacancies with increased S composition, and the quasi-Fermi energy level in semiconductors with respect to electrolyte redox potential is one of the causes that affects the electrocatalytic activity of counter electrodes. (Chemical Equation Presented).",

keywords = "CuS counter electrodes, Impedance spectroscopy, Knit coir mat, Quantum dot solar cells",

author = "\{Dennyson Savariraj\}, A. and Viswanathan, \{Kodakkal Kannan\} and Kandasamy Prabakar",

note = "Publisher Copyright: {\textcopyright} 2014 American Chemical Society.",

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month = nov,

day = "26",

doi = "10.1021/am504615x",

language = "English",

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journal = "ACS Applied Materials and Interfaces",

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publisher = "American Chemical Society",

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TY - JOUR

T1 - Influence of Cu vacancy on knit coir mat structured CuS as counter electrode for quantum dot sensitized solar cells

AU - Dennyson Savariraj, A.

AU - Viswanathan, Kodakkal Kannan

AU - Prabakar, Kandasamy

PY - 2014/11/26

Y1 - 2014/11/26

N2 - Knit-coir-mat-like structured CuS thin films prepared by chemical bath deposition with different time duration were used as counter electrode in qunatum dot sensitized solar cells. The film deposited at 4 h exhibited better electrochemical and photovoltaic performance with JSC, VOC, and FF values of 14.584 mA cm-2, 0.566 V, and 54.57% and efficiency of 4.53%. From the UV-vis absorption spectra, it is observed that CuS thin film exhibits free carrier intraband absorption in the longer wavelengh region. The enhanced performance of CuS counter electrodes is due to Cu vacancies with increased S composition, and the quasi-Fermi energy level in semiconductors with respect to electrolyte redox potential is one of the causes that affects the electrocatalytic activity of counter electrodes. (Chemical Equation Presented).

AB - Knit-coir-mat-like structured CuS thin films prepared by chemical bath deposition with different time duration were used as counter electrode in qunatum dot sensitized solar cells. The film deposited at 4 h exhibited better electrochemical and photovoltaic performance with JSC, VOC, and FF values of 14.584 mA cm-2, 0.566 V, and 54.57% and efficiency of 4.53%. From the UV-vis absorption spectra, it is observed that CuS thin film exhibits free carrier intraband absorption in the longer wavelengh region. The enhanced performance of CuS counter electrodes is due to Cu vacancies with increased S composition, and the quasi-Fermi energy level in semiconductors with respect to electrolyte redox potential is one of the causes that affects the electrocatalytic activity of counter electrodes. (Chemical Equation Presented).

KW - CuS counter electrodes

KW - Impedance spectroscopy

KW - Knit coir mat

KW - Quantum dot solar cells

UR - https://www.scopus.com/pages/publications/84914668012

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DO - 10.1021/am504615x

M3 - Article

AN - SCOPUS:84914668012

SN - 1944-8244

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JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 22

ER -

Influence of Cu vacancy on knit coir mat structured CuS as counter electrode for quantum dot sensitized solar cells

Abstract

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