@inproceedings{79d5297eccb542c1a0a3c2a676522c74,
title = "Influence of gate recess structure on the DC characteristics of 0.1-μm metamorphic HEMTs",
abstract = "Effects of the gate recess structures on the DC performances were investigated in 0.1-μm metamorphic high-electron-mobility transistors. Narrow gate recess structure showed significantly enhanced DC characteristics compared to wide gate recess structure in terms of drain-source saturation current increasing from 440 to 710 mA/mm and extrinsic transconductance increasing from 420 to 910 mS/mm. We propose that the observed variations in DC characteristics are due to the deep-level acceptor-type interface defects formed between the silicon-nitride passivation layer and the Schottky barrier layer. We performed hydrodynamic model simulation to verify the proposed mechanism, and the calculated result showed a good agreement with the experimental observation. copyright The Electrochemical Society.",
author = "Oh, \{Jung Hun\} and Back, \{Young Hyun\} and Choi, \{Seok Gyu\} and Moon, \{Sung Woon\} and Lee, \{Bok Hyung\} and Rhee, \{Jin Koo\} and Kim, \{Sam Dong\}",
year = "2006",
doi = "10.1149/1.2204880",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "71--77",
booktitle = "State-of-the-Art Program on Compound Semiconductors XLIV",
address = "United States",
edition = "5",
note = "State-of-the-Art Program on Compound Semiconductors XLIV 209th Electrochemical Society Meeting ; Conference date: 07-05-2006 Through 12-05-2006",
}