TY - JOUR
T1 - Influence of Gate Voltage Operation on Effective Mobility of Electrolyte-Gated Organic Transistors
AU - Nketia-Yawson, Vivian
AU - Nketia-Yawson, Benjamin
AU - Jo, Jea Woong
N1 - Publisher Copyright:
© 2022, The Polymer Society of Korea and Springer.
PY - 2022/10
Y1 - 2022/10
N2 - Low-voltage operation has long been a beneficial characteristic of electrolyte-gated organic transistors (EGOTs) because of the high capacitance of the electrolyte dielectric layer. Operating below 3 V, several reported EGOTs have effective mobilities above 1 cm2V−1s−1 based on the recently introduced reliability factor for organic field-effect transistors (OFETs). In this study, we report on the influence of gate voltage operation on the effective mobilities of EGOTs using poly(3-hexylthiophene) (P3HT) semiconductor and electrolyte dielectric operating at different gate voltages of −1, −1.5, and −2 V. Average field-effect mobilities (μFET) of 2.35 ± 0.41 (2.39 ± 0.27), 3.74 ± 0.33 (2.95 ± 0.32), and 3.30 ± 0.44 (2.81 ± 0.38) cm2 V−1 s−1 are measured in the saturation (linear) regimes for devices operating at −1, −1.5 and −2 V, respectively. With a reliability factor of 74.9 ± 2.8% (86.2 ± 2.2%) in the saturation (linear) regime, devices at −1.5 V measured the highest average effective mobility (μeff) of 2.79 ± 0.22 (2.54 ± 0.29) cm2 V−1 s−1 in the saturation (linear) regime due to efficient charge transport with minimal charge scattering. Our results highlight fundamental optimization techniques helpful for achieving optimal effects.
AB - Low-voltage operation has long been a beneficial characteristic of electrolyte-gated organic transistors (EGOTs) because of the high capacitance of the electrolyte dielectric layer. Operating below 3 V, several reported EGOTs have effective mobilities above 1 cm2V−1s−1 based on the recently introduced reliability factor for organic field-effect transistors (OFETs). In this study, we report on the influence of gate voltage operation on the effective mobilities of EGOTs using poly(3-hexylthiophene) (P3HT) semiconductor and electrolyte dielectric operating at different gate voltages of −1, −1.5, and −2 V. Average field-effect mobilities (μFET) of 2.35 ± 0.41 (2.39 ± 0.27), 3.74 ± 0.33 (2.95 ± 0.32), and 3.30 ± 0.44 (2.81 ± 0.38) cm2 V−1 s−1 are measured in the saturation (linear) regimes for devices operating at −1, −1.5 and −2 V, respectively. With a reliability factor of 74.9 ± 2.8% (86.2 ± 2.2%) in the saturation (linear) regime, devices at −1.5 V measured the highest average effective mobility (μeff) of 2.79 ± 0.22 (2.54 ± 0.29) cm2 V−1 s−1 in the saturation (linear) regime due to efficient charge transport with minimal charge scattering. Our results highlight fundamental optimization techniques helpful for achieving optimal effects.
KW - effective mobility
KW - electrolyte-gated organic transistors
KW - poly(3-hexylthiophene)
KW - reliability factor
KW - solid-state electrolyte
UR - http://www.scopus.com/inward/record.url?scp=85131442090&partnerID=8YFLogxK
U2 - 10.1007/s13233-022-0075-z
DO - 10.1007/s13233-022-0075-z
M3 - Article
AN - SCOPUS:85131442090
SN - 1598-5032
VL - 30
SP - 707
EP - 711
JO - Macromolecular Research
JF - Macromolecular Research
IS - 10
ER -