Abstract
In this work, the influence of anion composition on the photoresponse characteristics of zinc oxynitride thin film transistors is investigated and compared directly to conventional In-Ga-Zn-O TFTs. Increasing the ratio of N to (N+O) led to higher field effect mobility and improved subthreshold swing. The subgap density of states extracted by monochromatic photonic capacitance-voltage measurement indicated that the nitrogen-related defect states, such as nitrogen vacancies, increased with increasing nitrogen gas flow rate. Furthermore, the photoconductivity mechanism of ZnON TFTs is discussed in detail.
Original language | English |
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Article number | 9001140 |
Pages (from-to) | 561-564 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 41 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2020 |
Keywords
- anion composition
- persistent photoconductivity (PPC)
- subgap density of states (DOS)
- Zinc oxynitride (ZnON)