Influence of Nitrogen Content on Persistent Photoconductivity in Zinc Oxynitride Thin Film Transistors

Jun Tae Jang, Hyoung Do Kim, Dong Myong Kim, Sung Jin Choi, Hyun Suk Kim, Dae Hwan Kim

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

In this work, the influence of anion composition on the photoresponse characteristics of zinc oxynitride thin film transistors is investigated and compared directly to conventional In-Ga-Zn-O TFTs. Increasing the ratio of N to (N+O) led to higher field effect mobility and improved subthreshold swing. The subgap density of states extracted by monochromatic photonic capacitance-voltage measurement indicated that the nitrogen-related defect states, such as nitrogen vacancies, increased with increasing nitrogen gas flow rate. Furthermore, the photoconductivity mechanism of ZnON TFTs is discussed in detail.

Original languageEnglish
Article number9001140
Pages (from-to)561-564
Number of pages4
JournalIEEE Electron Device Letters
Volume41
Issue number4
DOIs
StatePublished - Apr 2020

Keywords

  • anion composition
  • persistent photoconductivity (PPC)
  • subgap density of states (DOS)
  • Zinc oxynitride (ZnON)

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