Abstract
We present the oxygen ion drift-based resistive switching features of TiOx/TiOy bi-layer homo-junctions. The TiOx layer in this bi-layer configuration was designed to have a stoichiometric chemical composition of TiO2, while the TiOy layer was designed to have a non-stoichiometric chemical composition. X-ray photoelectron spectroscopy measurements were carried out before and after electro-forming to determine the role of non-lattice oxygen content. Variation of the oxygen ion content in the TiO2 layers resulted in changes in the on/off ratio and increased the non-lattice oxygen content. A possible switching mechanism based on oxygen ion content is discussed.
Original language | English |
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Pages (from-to) | 355-358 |
Number of pages | 4 |
Journal | Current Applied Physics |
Volume | 14 |
Issue number | 3 |
DOIs | |
State | Published - Mar 2014 |
Keywords
- Non-lattice oxygen
- ReRAM
- Resistive switching
- XPS