Influence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching

Yoon Cheol Bae; Ah Rahm Lee; Gwang Ho Baek; Je Bock Chung; Tae Yoon Kim; Hyun Sik Im; Jin Pyo Hong

doi:10.1016/j.cap.2013.11.029

Influence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching

Yoon Cheol Bae
, Ah Rahm Lee
, Gwang Ho Baek
, Je Bock Chung
, Tae Yoon Kim
, Hyun Sik Im
, Jin Pyo Hong

Division of System Semiconductor

Hanyang University

Research output: Contribution to journal › Article › peer-review

Abstract

We present the oxygen ion drift-based resistive switching features of TiO_x/TiO_y bi-layer homo-junctions. The TiO_x layer in this bi-layer configuration was designed to have a stoichiometric chemical composition of TiO₂, while the TiO_y layer was designed to have a non-stoichiometric chemical composition. X-ray photoelectron spectroscopy measurements were carried out before and after electro-forming to determine the role of non-lattice oxygen content. Variation of the oxygen ion content in the TiO₂ layers resulted in changes in the on/off ratio and increased the non-lattice oxygen content. A possible switching mechanism based on oxygen ion content is discussed.

Original language	English
Pages (from-to)	355-358
Number of pages	4
Journal	Current Applied Physics
Volume	14
Issue number	3
DOIs	https://doi.org/10.1016/j.cap.2013.11.029
State	Published - Mar 2014

Keywords

Non-lattice oxygen
ReRAM
Resistive switching
XPS

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10.1016/j.cap.2013.11.029

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@article{a16384bf418a47bfb623929d31abb320,

title = "Influence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching",

abstract = "We present the oxygen ion drift-based resistive switching features of TiOx/TiOy bi-layer homo-junctions. The TiOx layer in this bi-layer configuration was designed to have a stoichiometric chemical composition of TiO2, while the TiOy layer was designed to have a non-stoichiometric chemical composition. X-ray photoelectron spectroscopy measurements were carried out before and after electro-forming to determine the role of non-lattice oxygen content. Variation of the oxygen ion content in the TiO2 layers resulted in changes in the on/off ratio and increased the non-lattice oxygen content. A possible switching mechanism based on oxygen ion content is discussed.",

keywords = "Non-lattice oxygen, ReRAM, Resistive switching, XPS",

author = "Bae, \{Yoon Cheol\} and Lee, \{Ah Rahm\} and Baek, \{Gwang Ho\} and Chung, \{Je Bock\} and Kim, \{Tae Yoon\} and Im, \{Hyun Sik\} and Hong, \{Jin Pyo\}",

year = "2014",

month = mar,

doi = "10.1016/j.cap.2013.11.029",

language = "English",

volume = "14",

pages = "355--358",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - Influence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching

AU - Bae, Yoon Cheol

AU - Lee, Ah Rahm

AU - Baek, Gwang Ho

AU - Chung, Je Bock

AU - Kim, Tae Yoon

AU - Im, Hyun Sik

AU - Hong, Jin Pyo

PY - 2014/3

Y1 - 2014/3

N2 - We present the oxygen ion drift-based resistive switching features of TiOx/TiOy bi-layer homo-junctions. The TiOx layer in this bi-layer configuration was designed to have a stoichiometric chemical composition of TiO2, while the TiOy layer was designed to have a non-stoichiometric chemical composition. X-ray photoelectron spectroscopy measurements were carried out before and after electro-forming to determine the role of non-lattice oxygen content. Variation of the oxygen ion content in the TiO2 layers resulted in changes in the on/off ratio and increased the non-lattice oxygen content. A possible switching mechanism based on oxygen ion content is discussed.

AB - We present the oxygen ion drift-based resistive switching features of TiOx/TiOy bi-layer homo-junctions. The TiOx layer in this bi-layer configuration was designed to have a stoichiometric chemical composition of TiO2, while the TiOy layer was designed to have a non-stoichiometric chemical composition. X-ray photoelectron spectroscopy measurements were carried out before and after electro-forming to determine the role of non-lattice oxygen content. Variation of the oxygen ion content in the TiO2 layers resulted in changes in the on/off ratio and increased the non-lattice oxygen content. A possible switching mechanism based on oxygen ion content is discussed.

KW - Non-lattice oxygen

KW - ReRAM

KW - Resistive switching

KW - XPS

UR - https://www.scopus.com/pages/publications/84892158613

U2 - 10.1016/j.cap.2013.11.029

DO - 10.1016/j.cap.2013.11.029

M3 - Article

AN - SCOPUS:84892158613

SN - 1567-1739

VL - 14

SP - 355

EP - 358

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3

ER -

Influence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching

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Keywords

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